溶膠凝膠法製備鋁及銦摻雜之氧化鋅透明導電膜特性研究

Aluminum and Indium-Doped Transparent Conductive Zinc-Oxide Thin Films Deposited by the Sol-Gel Method

王中彥(Chung-Yen Wang)

指導教授 ： 吳志毅

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2012年)

https://doi.org/10.6342/NTU.2012.00739

摘要

本論文將介紹以溶膠凝膠方法製備N型氧化鋅透明導電膜製程，並探討摻雜物種類與摻雜濃度對氧化鋅透明導電膜之電學及光學特性的影響。
研究的目的在於藉由調變前驅溶液中的摻雜物濃度，以製備具有最低電阻率的氧化鋅透明導電膜，並利用各種量測方式，深入分析摻雜物在氧化鋅內引起的各種效應，以了解不同摻雜濃度在氧化鋅中造成電學與光學特性上變化的原因。
實驗共分為三大主題：摻鋁氧化鋅(AZO)、摻銦氧化鋅(IZO)以及鋁銦共摻雜氧化鋅(AIZO)。在摻鋁氧化鋅的部分中，氧化鋅經過0.67 at%的鋁摻雜可得到最佳的電性，電阻率、載子濃度和載子遷移率分別為1.78×〖10〗^(-2) Ωcm、2.92×〖10〗^19 〖cm〗^(-3)以及12.0〖cm〗^2/Vs，樣品在可見光區皆有高於80%的穿透度。
在摻銦氧化鋅的部分，則是在3.5 at%的銦摻雜下，氧化鋅可得到最佳電性，其電阻率、載子濃度和載子遷移率分別為1.51×〖10〗^(-2) Ωcm、3.25×〖10〗^19 〖cm〗^(-3)以及12.7〖cm〗^2/Vs，樣品在可見光區的穿透度最高可達85%以上。
鋁銦共摻雜氧化鋅的實驗中，在1.2 at%的銦和0.67 at%的鋁混合摻雜的情形下可得到最低之電阻率，其電阻率、載子濃度和載子遷移率分別為7.95×〖10〗^(-3) Ωcm、4.28×〖10〗^19 〖cm〗^(-3)以及18.3〖cm〗^2/Vs，在可見光區的穿透度皆可達到83%以上。

關鍵字

溶膠凝膠 ； 透明導電氧化物 ； 氧化鋅 ； 氧化鋁鋅 ； 氧化銦鋅

並列摘要

In this study, we investigate the fabrication process to derive N-type ZnO transparent conductive thin films by sol-gel method and discuss the doping effect on ZnO films.
This investigation aims to produce solution-processed ZnO films with lowest resistivity by changing the composition of doping materials. In addition, we wish to realize the effect on electrical and optical properties brought by different doping composition in ZnO films.
There are three topics in the thesis：Aluminum-doped ZnO(AZO), Indium-doped ZnO and Aluminum-Indium co-doped ZnO.
For Aluminum-doped ZnO, resistivity reaches a minimum value at 0.67% Al doping concentration, with resistivity of 1.78×〖10〗^(-2) Ωcm, electron concentration of 2.92×〖10〗^19 〖cm〗^(-3), and carrier mobility of 12.0〖cm〗^2/Vs. For optical properties, all AZO samples exhibit more than 80% transparent in visible region.
For Indium -doped ZnO, resistivity reaches a minimum value at 3.5% In doping concentration, with resistivity of 1.51×〖10〗^(-2) Ωcm, electron concentration of 2.75×〖10〗^19 〖cm〗^(-3), and carrier mobility of 13.0〖cm〗^2/Vs. The IZO samples can reach over than 85% transparent in visible region.
For Aluminum-Indium co-doped ZnO, resistivity reaches a minimum value at AIZO film co-doped with 0.67% Al and 1.2 at%, with resistivity of 7.95×〖10〗^(-3) Ωcm, electron concentration of 4.28×〖10〗^19 〖cm〗^(-3), and carrier mobility of 18.3〖cm〗^2/Vs. All AIZO samples demonstrate more than 83% transparent in visible region.

並列關鍵字

sol-gel ； transparent conductive oxide ； Zinc oxide (ZnO) ； In-doped ZnO(IZO) ； Al-doped ZnO(AZO)

參考文獻

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