電漿輔助型原子層沉積之發光二極體特性研究

Characterization of Light-Emitting Diodes Fabricated by Plasma Enhanced Atomic Layer Deposition

李柏廷(Po-Ting Lee)

指導教授 ： 彭隆瀚

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.00891

摘要

摘要
　　本論文主要探討原子層沉積系統以及其發光二極體元件應用分析。內容分為兩部分，第一部分為電漿輔助型原子層沉積系統之機台校正及材料分析，第二部分為分別利用熱輔助型原子層沉積系統及電漿輔助型原子層沉積系統進行發光二極體之製作及量測。
　　首先，本文針對電漿輔助型原子層沉積系統做機台操作之校正，並對其沉積材料利用橢圓偏振技術和表面輪廓儀進行成長速率之校正以及透過PL、XPS等量測技術做材料特性分析。實驗結果顯示，吾人成功利用電漿輔助型原子層沉積系統沉積出氧化鋅、氧化鉿、氧化鋁、氧化鎵四種氧化物，以及氮化鋁、氮化鎵兩種氮化物。
　　吾人分別以熱輔助型原子層沉積系統及電漿輔助型原子層沉積系統進行發光二極體之製作，並量測其電壓-電流特性、電激發光頻譜。首先利用熱輔助型原子層沉積系統製作三種不同堆疊結構之發光二極體，並分析及比較其特性；再利用電漿輔助型原子層沉積系統進行發光二極體之製作，並與熱輔助型原子層沉積系統製作之元件做比較，結果顯示，在20mA之操作電壓由7.2V降為5.3V；而20mA時之微分電阻由96.7Ω降為71.6Ω。且輻射光譜中心波長與人眼視覺之敏感度光譜範圍幾乎吻合。

關鍵字

電漿輔助型原子層沉積系統 ； 發光二極體

並列摘要

Abstract
　　In this thesis, we present the operational procedure of plasma enhanced atomic layer deposition (PE-ALD) system and the growth, analysis, fabrication, characterization of Si-based oxide light emitting devices. The following instrument of photoluminescence (PL), X-ray photoelectron spectroscope (XPS), ellipsometry, surface profiler were used to characterize the thickness, growth rate, composition, and crystalline properties of the materials grown by the PE-ALD system.
　　From the data analysis made on the ellipsometry and surface profiler measurement, we identified the materials growth rate under ALD mode correctly. From the XPS data analysis, we identify the material’s binding energy position. From above analysis, we have shown four oxide material including ZnO, HfO2, Al2O3, Ga2O3 and two nitride material including AlN, GaN from our PE-ALD system.
　　Si-based Light-emitting devices base upon the Thermal ALD-grown oxide and PE ALD-grown oxide were further fabricated and characterized. Three different multilayer oxide light-emitting devices were fabricated by Thermal ALD. From the current-voltage, electroluminescence (EL), we prove that double layer oxide light-emitting devices had higher light-emitting intensity. Oxide light-emitting devices were also fabricated by PE ALD system. Compare to devices fabricated by Thermal ALD system, the PE ALD-grown devices had better electrical characteristics and the light-emitting spectrum can be matched to human vision sensitivity.

並列關鍵字

Plasma Enhanced Atomic Layer Deposition ； Light-Emitting Diodes

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