於poly-Si上之白光二極體及二極記憶體之研製

本論文利用原子層沉積系統製作結合發出寬頻白光以及電阻型記憶特性的元件，內容分三部分，第一部分闡述寬頻白光及電阻型記憶操作的原理，第二部分為元件之製作及材料分析，包含了電漿輔助型原子層沉積系統的原理與操作、X射線光電子能譜特性分析及元件完整的製程，第三部分為元件之量測及模擬計算，包含電激發光光譜、色座標及相關色溫計算、電壓-電流特性、直流電壓掃描分析、單點脈衝電阻切換、poly-Si元件之模擬分析。吾人利用電漿輔助型原子層沉積系統沉積AlON/GaON/AlON/GaON/AlON (2/18/2/9/2nm)、AlON/GaON/AlON (1.5/4.5/1.5nm)、HfO2/GaON/HfO2(2/9/2nm)、HfO2/HfN/HfO2 (1.5/4.5/1.5nm)，並製作在<100>p-Si基板、<111>n-Si基板及poly-Si基板，其中p-Si 啟動電壓皆較n-Si基板元件來的小1V左右，此驅動電壓之位移，顯示n /p型Si之費米能級差異，也說明白光機制乃來自 ITO 之電子與主動層本質缺陷之輻射結合。吾人亦建立poly-Si元件之模擬計算模型，可利用結構之厚度推算發光結果，並透過模擬與實際量測相互驗證。而元件記憶體電阻切換抹寫次數可達數百次。

關鍵字

發光二極體；電阻型記憶體

並列摘要

In this thesis, a new kind of devices which combines broadband white light emission and resistive random access memory characteristics is demonstrated. The devices were prepared by plasma-enhanced atomic layer deposition (PE-ALD). There are three main parts in this thesis. First, the mechanisms of broadband white light emission and resistive random access memory characteristics are reviewed. Second, the fabrication of devices, includ-ing the mechanism and operation of PE-ALD, and X-ray photoelectron spectroscopy analysis of Gallium oxy-nitride are introduced. The third part is the measurement, simulation, and analysis of devices, including electroluminescence spectra, color coordinates, color temperature, I-V characteristics, DC voltage sweep analysis, pulse memory switching operation, and simulation of the device on poly-Si. PE-ALD is used to deposit AlON/GaON/AlON/GaON/AlON (2/18/2/9/2nm), AlON/GaON/AlON(1.5/4.5/1.5nm), HfO2/GaON/HfO2 (2/9/2nm), HfO2/HfN/HfO2 (1.5/4.5/1.5nm), on p-Si<100>,n-Si<111> , and poly-Si substrates. The turn-on voltages of devices on p-Si are found 1V smaller than those of the devices on n-Si, which shows the Fermi level difference of p-Si and n-Si, and describes the broad band white light emission is owning to the radiation combination of the electrons from Indium Tin Oxide and the intrinsic defect of ALD layer. We build a simulation method for poly-Si device, which can be used to estimate the emission result by the thickness of the structure. We can verify the simulation result with that of the experimental measurement. The number of ReRAM switching operations can be up to hundreds of cycles.