應用於微波寬頻功率放大器之研究

Research on Broadband Power Amplifiers for Microwave Applications

黃品澄(Pin-Cheng Huang)

指導教授 ： 王暉

國立臺灣大學/電機資訊學院/電信工程學研究所/博士(2011年)

https://doi.org/10.6342/NTU.2011.10324

摘要

本論文探討應用於微波頻段寬頻功率放大器之研究，並詳細說明功率放大器之設計理論及設計流程，同時以一24 GHz功率放大器舉例說明如何設計匹配與最佳化選取功率放大器之電晶體尺寸，此24 GHz功率放大器電路量測之輸出飽和功率為22 dBm，其增益1 dB壓縮點為20 dBm，其功率轉換效率為30 %。並且說明如何建立大訊號安杰羅夫電晶體模型以提供放大器設計模擬。
論文的第一部份描述一個使用0.18-μm 金氧互補半導體製程，1至5 GHz之寬頻功率放大器。同時分別分析變壓器耦合層疊結構功率放大器於金氧互補式半導體以及砷化鎵製程中之限制。利用互耦共振腔原理分析並提出寬頻設計方法，可使串聯輸入與串聯輸出的變壓器耦合層疊結構功率放大器能有寬頻之頻率響應。此高效率寬頻功率放大器電路量測之功率轉換效率為30 %，輸出增益1 dB壓縮點為20 dBm。相較於其他頻率低於10 GHz之金氧半導體功率放大器，此功率放大器擁有最大之頻寬百分比。
論文的第二部份說明一個使用0.18-μm 金氧互補半導體製程設計一4至17 GHz寬頻微小化功率放大器。為了獲得增益與輸出功率同時具有寬頻之響應，此率放大器使用疊接達靈頓架構。輸出與出入匹配電路均採用寬頻匹配設計。
論文的最後一個部份說明一個使用0.15-μm 假晶高電子遷移率電晶體砷化鎵半導體製程設計一17至35 GHz寬頻功率放大器。此部份分析互耦共振腔原理並提出寬頻設計方法。於功率放大器輸出端採用T型等效變壓器匹配可以同時獲得縮小晶片面積，降低匹配損耗，以及寬頻頻率響應等優點。

關鍵字

金氧半導體 ； 功率放大器 ； 寬頻

並列摘要

This doctoral dissertation investigates the broadband power amplifiers for microwave applications.
Both the theory and design procedures of power amplifiers are presented. A 24 GHz power amplifier is given as a design example to demonstrate how to design the matching circuits and the optimum device sizing procedure of power amplifiers. The measurement results of this 24 GHz power amplifier shows a 22 dBm of saturation power and 20 dBm of output power at 1 dB compression point with peak PAE of 20%. The large signal Angelov model parameters extraction procedures are also presented for the design of power amplifiers.
The first part of this dissertation presents a 1-5 GHz broadband power amplifier using 0.18-μm CMOS process. The physical limitations for designing the transformer-coupled stack power amplifier in CMOS process and GaAs based technology are analyzed. By using the coupled resonator theory and broadband design procedures, the series-input and series-output transformer-coupled stack power amplifier achieves broadband frequency response. This high efficiency broadband PA shows 30 % PAE and 20 dBm of output power at 1 dB compression point. This PA also shows the widest fractional bandwidth performance among CMOS PAs below 10 GHz.
The second part shows a 4-17 GHz wideband miniaturized power amplifier using 0.18-μm CMOS process. The Darlington cascode structure is used to maintain wideband gain and power response. Broadband matching circuits are designed in both input and output ports.
Finally a 17-35 GHz high efficient broadband power amplifier using 0.15-μm GaAs pHEMT process is described. A wideband power matching procedure is proposed by analyzing the equivalent output coupled resonators. Benefited by the equivalent T-shape matching transformer, the power amplifier achieves small chip size, low matching loss, and wide bandwidth simultaneously.

並列關鍵字

CMOS ； Broadband ； PA

參考文獻

[71] 雷明峰，微波雙模環形濾波器與層疊式功率放大器的研究，國立台灣大學電信工程研究所博士論文，2007年。

[1] D. Cabric, and Robert W. Brodersen, “Physical layer design issues unique to cognitive radio systems,” in IEEE Int. Symp. on Personal, Indoor and Mobile Radio Commun. Dig., Sept. 11-14, 2005, pp. 759–763.

[3] Jinho Jeong, Sataporn Pornpromlikit, Peter M. Asbeck, and Dylan Kelly, “A 20 dBm linear RF power amplifier using stacked silicon-on-sapphier MOSFETs,” IEEE Microw. Wireless Compon. Lett., vol. 16, pp. 684-686, Dec. 2006.

[4] Ming-Fong Lei, Zuo-Min Tsai, Kun-You Lin, and Huei Wang, “Design and analysis of stacked power amplifier in series-input and series-output configuration,” IEEE Tran. Microw. Theory Tech., vol. 55, No. 11, pp. 2802–2812, Dec.2007.

[5] A. K. Ezzeddine and H. C. Huang, “Ultra-broadband GaAs HIFET MMIC PA,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp.1320–1323.