隨著網際網路資料流量的需求不斷增長,以及半導體製程的進步,中至短距離的矽基光學傳輸連結被視為一個具有發展潛力及應用價值的研究領域。在本研究中,我們提出一個創新的製程技術,利用模具輔助的準分子雷射重整法,將矽核波導直接製作於矽塊材基板上。準分子雷射重整方法克服了傳統矽基光學元件僅能在絕緣層覆矽(silicon-on-insulator,SOI)基板上製作的限制;而透過CMOS相容的製程,製作出的光學波導元件可以與微電子元件進行單晶片(monolithic)整合,使矽光子元件系統在半導體工業可以更廣泛地被應用。另一方面,模具輔助法在製程上具有易於調控結構尺寸的優勢,並解決了準分子雷射處理在製作較小線寬結構時遭遇的結構起伏問題,提供了穩定且更具彈性的結構設計方法。在恰當的製程條件下製作出的矽光學波導結構允許單一光模態的傳輸,其傳輸損耗可降至2.2dB/cm。由於與基板隔絕距離超過1μm,此波導元件具有可忽略的基板耦合損耗,可在矽塊材基板上傳輸光學訊號,達到矽基板上的光學系統應用。
With the increasing demand of global data traffic as well as the major advances in semiconductor manufacturing techniques, silicon photonics-based medium- or short-reach interconnection has been considered as a field of research with great value and significant potential. In our study, we present a novel manufacturing process to fabricate silicon-core waveguide directly on bulk silicon substrate by applying mold-assisted excimer laser reformation system. Excimer laser treatment overcomes the major disadvantages of conventional Si photonics, which is being only realizable on SOI (silicon-on-insulator) substrates. Combining with CMOS-compatible processes, the fabricated optical waveguides could be monolithically integrated with microelectronic components and thus be widely applied in semiconductor industry. On the other hand, the proposed mold-assisted method provides a much easier way to modify the structure dimension of the fabricated waveguides, solves the fluctuation problem during excimer laser reformation, and allows a novel, stable and flexible structure design approach. Under proper processing condition, the fabricated Si-core waveguide supports single-mode operation with propagation loss of 2.23dB/cm. Due to the sufficient isolation distance of more than 1um from substrate, the substrate coupling loss of the waveguide is negligible. As a result, the Si-core waveguide is capable of transmitting optical signals on bulk Si substrate, making it possible to realize optical system application on bulk Si substrates.