應用於第五代行動通訊系統之毫米波功率放大器與微波高功率放大器模組之研究

本論文分為三大部分，提出了兩個功率放大器積體電路及一個高功率放大器模組。前兩者功率放大器應用於第五代行動通訊系統，後者高功率放大器模組應用於雷達干擾器。在本論文第二章中，呈現了28 GHz使用0.15微米砷化鎵製程設計的高效率的F類功率放大器。此電路在電晶體輸出端匹配電路中使用耦合器和並聯一組串聯的電感電容共振腔，以達到F類功率放大器輸出阻抗條件，同時使得電路達到較小的面積及更高的功率附加效率。在第三章中，呈現了39 GHz使用0.15微米氮化鎵製程設計的多爾蒂(Doherty)功率放大器，同時達到高輸出功率及高回推效率。此電路由主路徑及輔助路徑構成，分別為兩級偏壓在AB類及C類的共源級放大器結構組成，透過輸出匹配網路中的隨功率變化的阻抗轉換，使得可以達到提升回推的功率附加效率。在第四章中，呈現一個操作在6-18 GHz頻段的高功率放大器模組，並且搭配功率合成電路與偏壓電路的設計，整合設計出一寬頻且可以達到25瓦以上功率輸出的功率放大器模組。同時為了避免連續操作在高輸出功率下，因為元件的高電流而造成的溫度變異影響操作特性，甚至導致元件毀壞，此章同時也針對電路及元件的散熱能力做謹慎的評估，針對放大器模組的散熱做設計，使此整合電路在高功率輸出下，整體整合電路模組溫度變異不影響電路操作特性。

關鍵字

毫米波；第五代行動通訊； Ka頻段； F類功率放大器； Doherty功率放大器；微波；高功率放大器；模組化；散熱

並列摘要

This thesis is divided into three parts, two MMIC power amplifiers and a high-power amplifier module are proposed. The two MMIC power amplifiers are used in fifth-generation (5G) mobile communication systems, and the high-power amplifier module is used in radar jammers. In chapter 2, a 28 GHz high-efficiency class-F power amplifier in 0.15-μm GaAs pHEMT process is presented. In this circuit, to achieve the impedance condition of the output matching of the class-F power amplifier, a broadside-coupled transformer parallel with a series L-C resonator is used in the output of the transistor, which also minimizes the chip area and enhances the power added efficiency. In chapter 3, a 39 GHz Doherty power amplifier in 0.15-μm GaN HEMT process is presented, which achieves high output power and high back-off efficiency. The circuit is composed of the main path and an auxiliary path, which are composed of two-stage common-source amplifier structures biased in class-AB and class-C, respectively. It enhances the back-off power added efficiency through the impedance conversion of the output matching network that changes with the input power. In chapter 4, a high-power amplifier module operating in 6-18 GHz is presented. Consisting of the power combining circuit and the bias circuit, the high-power amplifier module with broadband and more than 25-watts output power is designed. Besides, to avoid the temperature variation caused by the high current of the components during continuous operation under high output power, which will affect the operating characteristics and even lead to the destruction of the components, the heat dissipation capabilities of the circuits and components are carefully evaluated. To ensure the temperature variation and the operating characteristics of the circuit under high power output, the cooling module of this high-power amplifier module is designed.

並列關鍵字

Millimeter-wave ； Fifth-generation (5G) ； Ka-Band ； Class-F Power amplifier ； Doherty Power amplifier ； Micro-wave ； High-Power amplifier ； Module ； Cooling

參考文獻

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應用於第五代行動通訊系統之毫米波功率放大器與微波高功率放大器模組之研究

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