砷化銦奈米線金氧半場效電晶體之製作與特性研究

Fabrication and Characterization of InAs nanowire Metal-Oxide-Semiconductor Field-Effect Transistor

楊哲維(Zhe-Wei Yang)

指導教授 ： 林浩雄

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2013年)

https://doi.org/10.6342/NTU.2013.01242

摘要

本論文已經成功地完成砷化銦(InAs)奈米線金氧半場效電晶體。奈米線係以分子束磊晶(MBE)法直接由矽(001)指向圖案基板沿[111]方向成長。我們利用電子束微影系統在絕緣基板之上先定義出源極、閘極、汲極，再使用電子束蒸鍍機鍍上金屬，並浮蝕(lift-off)電極圖案。接著再使用電子束微影系統進行二次對準，定義出閘極要沉積氧化層的區域。並以原子層沉積系統沉積高介電係數氧化層氧化鉿(HfO2)。然後再用雙束型聚焦離子束顯微系統(DB-FIB)所附屬的擷取系統(Pick-up system)將砷化銦奈米線安置到源極與汲極金屬電極之間以形成MOS的結構。為了改善奈米線與金屬電極間的接觸電阻，我們利用雙束型聚焦離子束顯微系統沉積鉑(Pt)以“焊接”奈米線與金屬電極，並用快速退火爐退火以獲致源極與汲極的歐姆接觸。目前我們已成功完成，通道寬度~100 nm、閘極長度為~500 nm、轉導值(gm)為2.3 mS/mm以及電子移動率為1630〖 cm〗^2/V-s之砷化銦奈米線電晶體。

關鍵字

砷化銦奈米線 ； 金氧半場效電晶體

並列摘要

In this thesis, we have successfully made the InAs nanowire MOSFET. The nanowire was grown in Si/SiO2 nanotrench structure by gas source molecular beam epitaxy (GSMBE). We defined the source, gate, and drain by e-beam lithography. Then we deposited metal by e-beam evaporator, and made the electrodes by lift-off. We defined the region where we wanted to deposit gate oxide by using multiple lithographic steps, and placed the nanowire into the area we wanted by using pick-up system. For improving the ohmic contact between the nanowire and the electrodes by depositing Pt by dual-beam focused ion beam (DB-FIB) then did rapid thermal annealing (RTA). In conclusion, we have succeeded in fabricating the InAs nanowire MOSFET, which gate width is about 100nm, gate length is about 500nm, transconductance is about 2.3 mS/mm, and electron mobility is 1630〖 cm〗^2/V-s.

並列關鍵字

InAs nanowire ； MOSFET

參考文獻

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