利用準分子雷射退火與特殊吸熱層製備多晶矽薄膜電晶體

The Fabrication of Poly-Si Thin Film Transistor by Excimer Laser Annealing with a SiON Absorption Layer

李國賢(Kuo-Hsien Lee)

指導教授 ： 李嗣涔

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.00787

摘要

在本實驗中,利用背打雷射以及特殊吸熱層的方式製備出複晶矽的晶粒可以達到7.6 x 2.9 μm2。而利用一般雷射方式與此種背打方式所製備出的複晶矽，其拉曼波峰峰值分別為516.8 cm-1以及518.2 cm-1。此外，一般正打雷射與利用背打方式所製作出來元件的電子遷移率分別為14 cm2/V-sec和81 cm2/V-sec，背打方式造成的大複晶晶粒使得元件特性有了顯著的提升。最後，在嘗試製作的背打輕摻雜汲極的薄膜電晶體元件中，將討論其元件特性。

關鍵字

薄膜電晶體 ； 準分子雷射 ； 複晶矽

並列摘要

Poly-Si grain size can be increased up to 7.6 x 2.9 μm2 by back side excimer laser annealing (ELA) with a SiON absorption layer underneath the a-Si film. The Raman peak of typical poly-Si and that one fabricated by back side ELA is at 516.8 and 518.2 cm-1, respectively. The mobility of typical top-gated ELA device is 14 cm2/V-sec; but it increases to 81 cm2/V-sec for the poly-Si TFT device with absorption layer by back side ELA. The improved performance is due to the enlargement of polysilicon grain size. The performance of poly-Si TFT with lightly doped drain (LDD) by back side ELA will also be discussed .

並列關鍵字

polysilicon ； Excimer laser annealing ； TFT

參考文獻

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