- 學位論文
單鍵驅動微機電式雙穩態開關元件之研製
A MEMS Bistable Device with Push-On-Push-Off Capability
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摘要
本研究系研發製作一新型微機電式雙穩態之驅動裝置，僅需要單一驅動電源即可切換雙穩態機構之兩個穩態，為全世界第一個以單鍵驅動實現Push-On-Push-Off的微機電開關元件。此裝置由兩組雙曲型樑(Centrally clamped double curved beam)及一組Ｖ型樑致動器(V-beam actuator，VBA)所組成，此兩組雙曲型樑分別連接於槓桿的兩端，連接於槓桿長端處為位移放大機構(Displacement Amplifier Mechanism，DAM)，連接於槓桿短端處為雙穩態開關機構(Bisbale Switch Mechanism，BSM)，Ｖ型樑致動器則連接於槓桿長端另一側。此驅動裝置之操作分為兩部分，雙穩態機構由第一穩態跳躍至第二穩態為Push-On，當雙穩態機構由第二穩態被釋放回第一穩態為Push-Off。在Push-On操作時，施加電壓於VBA，加熱產生熱形變並推擠槓桿長端DAM之端點，DAM將其端點位移放大為側向位移，進一步地推動BSM中點使其由第一穩態(Off-State)跳躍(snap through)至第二穩態(On-State)。Push-Off操作時，施加相同之電壓於VBA，VBA推擠槓桿長端，因槓桿原理作用，VBA熱形變在槓桿短端被縮小為BSM端點位移，處於第二穩態之BSM被槓桿拉伸其端點，導致雙穩態特性消失，由第二穩態被釋放回到第一穩態。此裝置結構之設計乃是架構於物理模型的推導並且配合數值模擬之結果來進行設計。製程相當簡單，只需要單一光罩並採用SOI 晶圓，以標準化微機電製程ICP-RIE加工。此裝置採用單一電壓源，在Push-On及Push-Off操作以相同之驅動電壓，控制加熱時間以達到Push-On及Push-Off。電壓驅動所需時間與曲型樑長度成反比，因此增加曲型樑長度可以有效降低驅動時間。本研究設計了三種不同尺寸之曲型樑，曲型樑長度為2000μm，施加電壓值7.2V，Push-On所需時間為30ms，Push-Off所需時間為50ms。
並列摘要
This paper presents the first MEMS fully compliant bistable device that requires only one independent driving source for switching between its two stable states. The proposed device employs a mechanically Push-On-Push-Off mechanism consisting of two curved beam structures. An integrated V-beam actuator is used as the only actuation component. The proposed device can be easily realized on an SOI wafer by using the ICP-RIE process with a single photomask. Preliminary measurement results show that a 30-ms pulse of 7.2 V applied to the V-beam actuator can drive the device from the off-state to the on-state, and a 50-ms pulse of 7.2 V can release the device from the on-state back to the off-state. Transient displacement results measured by using a vibrometer are also provided. In this paper, the bistability of a pre-shaped buckled beam with elastically constrained boundary conditions is studied theoretically and experimentally. The buckled shape model, which characterizes the initial buckled deflection, is employed in this study. A systematic method of designing bi-stable buckled beam has been developed and applied to the bistable switch mechanism and displacement amplifier mechanism. The method is tested against FEM simulation and shown to be in excellent agreement. The fabricated devices are tested for bistability by thermal actuation and the results agress well with the analysis.
參考文獻
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