鍺錫合金平面式光電元件之溫度相關性研究

Temperature-dependent electroluminescence from GeSn planar light emitting diode on Si substrate

張太瑋(Tai-Wei Chang)

指導教授 ： 林致廷

共同指導教授 ： 鄭鴻祥(Hung-Hsiang Cheng)

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2017年)

https://doi.org/10.6342/NTU201700984

摘要

在本實驗中，以分子束磊晶技術成長鍺錫合金材料為PIN結構發光二極體的主要發光層。較高的電子遷移率與較小的能隙差距也是我們選用鍺錫合金材料在該實驗的主因。由於現今廣泛的紅外光科技應用，我們可以藉由在鍺錫合金中調整錫的含量，達到延長發光二極體的發光波長。藉由如此的技術，使得光電工程應用中可以達到更加不同的發展與應用。

特別是我們也針對在不同溫度下，成長於矽基板上的鍺錫合金材料於PIN結構中的發光二極體作電致發光的實驗調查。在此實驗調查中，施以低電流注入和低錫含量作為實驗條件。並在電致發光實驗前，先作電壓電流曲線證實此發光二極體具有整流效果且確認製程的成功。同時在接下來的電致發光實驗中，我們成功獲得了此鍺錫合金材料發光二極體的電致發光所產生的間接能隙光響應。並藉此瞭解了溫度和間接能隙間的關係與描述式的相關參數。

關鍵字

鍺錫合金 ； 發光二極體 ； 電致發光 ； 溫度相關

並列摘要

In this study, GeSn is the main material of active layer grown by MBE (molecular beam epitaxy) for planar p-i-n light emitting diode. The higher electron mobility and smaller bandgap energy are the main reasons we chose GeSn for our experiment. Due to the widely spread of infrared technical applications, we also can adjust Sn content in GeSn material to extend its wavelength of excitation so that different optical and electrical engineering application might be developed.

In particular, the electroluminescence from our GeSn p-i-n planar light emitting diode on Si was investigated under different temperatures ranging from 30 to 300 K. The light emitting diode was operated at the low current injection, and the I-V curve measurement was successfully carried out to verify its availability. We obtained no-phonon assisted band to band transition from indirect bandgap in electroluminescence emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The parameters of temperature-dependent bandgap energy followed Varshni’s empirical expression were investigated.

並列關鍵字

GeSn ； Light emitting diode ； Electroluminescence ； Temperature dependent

參考文獻

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