利用原子層沉積技術成長氧化鋁及二氧化鈦薄膜應用在高效率矽晶太陽能電池之研究

Application of Aluminum Oxide and Titanium Oxide Thin Film Grown by Atomic Layer Deposition on High-Efficiency Silicon Solar Cells

林哲維(Che-Wei Lin)

指導教授 ： 陳敏璋

國立臺灣大學/工學院/材料科學與工程學研究所/碩士(2013年)

https://doi.org/10.6342/NTU.2013.10672

摘要

本論文研究利用原子層沉積技術(Atomic Layer Deposition, ALD)提升矽晶太陽能電池的效率。在矽晶片表面製作奈米級粗紋化結構可以有效降低反射率，可以大幅提升太陽能電池的吸光量。由於ALD技術具有(1)精密的厚度控制，精密度可達一個原子層；(2)精準的材料成份控制；(3)大面積、大產量的生產能力；(4)優異的均勻度與表面覆蓋能力；(5)材料缺陷密度低、無孔洞結構；(6)較低的材料成長溫度等優點。為了降低矽晶片的表面缺陷，我們進一步利用ALD成長氧化鋁及二氧化鈦表面鈍化層，以提升矽晶片少數載子生命期並提高太陽能電池元件的效率。本論文利用原子層沉積技術提高具有矽奈米柱與氧化鋅奈米柱陣列之矽晶太陽能電池的發電效率，分別可達到18.74%與16.42%。

關鍵字

原子層沉積技術 ； 表面鈍化層 ； 奈米級粗紋化結構 ； 黑晶片太陽能電池 ； 氧化鋅奈米柱陣列

並列摘要

In this thesis, we report significant enhancement in efficiency of nanotextured silicon solar cells by atomic layer deposition (ALD). Nanotextured structures based on silicon nanowire and ZnO nanorod arrays, respectively, were fabricated on the surface of silicon substrates to reduce the reflection and increase the light absorption of solar cells. ALD technique offers many advantages, including accurate thickness and composition control, excellent conformality, low defect density, high uniformity over a large area, good reproducibility, and low growth temperatures. Accordingly, surface passivation layers prepared by ALD were used to suppress the surface recombination of the nanotextured silicon solar cells. High Efficiencies up to 18.74% and 16.42% were realized in nanotextured silicon solar cells based on silicon nanowire and ZnO nanorod arrays, respectively, assisted by the ALD techniques.

並列關鍵字

atomic layer deposition (ALD) ； surface passivation layer ； nanotextured structure ； black silicon solar cells ； ZnO(Zinc Oxide) nanorod arrays

參考文獻

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