絕緣層上薄層鍺晶圓光偵測器
及增加效能

“聰明切”是近期發明能建構高品質絕緣層上覆鍺系統的一項先進的技術並且已成功應用在許多元件上，在本論文中，藉由直接晶圓鍵結和氫引起轉換層技術鍺薄膜可成功轉移至另一覆蓋五十奈米熱二氧化矽的矽晶圓上，由於鍺分別擁有在遠紅外線良好的吸收能力及高載子遷移率，因此絕緣層上覆鍺能夠增加金氧半光偵測器的光響應度和操作速度。本論文中，為了降低成本並用於背面入射應用，我們選擇康寧七零五九玻璃取代矽作為玻璃上覆鍺光偵測器構造的基版，由於光產生電子電洞對可能經由在鍺及二氧化矽介面的缺陷重新結合，因此當蝕刻鍺層的表面可以降低暗電流並且在可見光的照射下增加光響應。除此之外，如果歐姆接觸由鋁金屬換成銦錫氧化物應用於背面入射在玻璃上覆鍺基版上，此結構將可以運用於太陽能電池科技。而且，聰明切科技也應用在鍺伯膜轉換至可撓式聚醯亞鞍膜上，並且與現今的微電子設備及半導體產業製程科技整合。最後，化學鍵鍺氰鍵在藉由一種簡單可於室溫下進行的冠狀醚氰化物處理而形成，並且它們能夠確實消滅在鍺和二氧化矽層的接面的介面態缺陷。

關鍵字

絕緣層上覆鍺；光偵測器；康寧玻璃；銦錫氧化物；聚醯亞鞍膜；氰化鉀

並列摘要

Smart-Cut is a recently established, advanced technology for fabricating high-quality Germaniun-on-insulator (GOI) systems and has successfully applied to many devices. In this thesis, the thin film germanium layer is transferred successfully to another silicon wafer capped with about 50 nm thermal SiO2 by direct wafer bonding and hydrogen-induced layer transfer and formed the germanium-on-insulator (GOI) structure. The germanium-on-insulator can increase the responsivity and the speed of the MOS photodetector due to the large absorption in the infrared and high mobility of Ge, respectively. In this thesis, we choose the corning 7059 glass displacing Si to be the substrate for the fabrication of GOG photodetector in order to decrease the cost and be used for back incident application. The photogenerated electron-hole pairs may recombine via defects at the Ge/SiO2 interface and consequently etching the surface of germanium layer could decrease the dark current and increase the responsivity under the visible light exposure. In addition, the ohmic contact is exchanged from aluminum to indium-tin-oxide (ITO) to apply on the GOG substrate for back incident application. This germanium-on-ITO glass structure could be used for solar cell technology. Moreover, The smart-cut technology is also applied to germanium thin film transfer to flexible polyimide and integrating with existing microelectronic equipments and process technology of semiconductor factories Finally, the chemical bonds ‘‘Ge–CN bonds’’ are formed by a simple room temperature chemical method ‘‘crown-ether cyanide treatment’’ and they could authentically eliminate interface states at Ge/SiO2 interfaces.

並列關鍵字

GOI ； photodetector ； Corning glass ； ITO ； polyimide ； potassium cyanide

參考文獻

Chapter 1

[3] 2006 International Technology Roadmap for Semiconductors (ITRS).

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[6] Q.-Y. Tong, et al., Appl. Phys. Lett., Vol. 70,1390 (1997).

國際替代計量

絕緣層上薄層鍺晶圓光偵測器及增加效能

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