聚亞醯胺絕緣層上薄膜鍺光電元件及其可撓性分析

Thin Film Germanium-on-Polyimide Optoelectronic Devices and Flexibility Analysis

戴宇弘(Yu-Hung Dai)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.10392

摘要

本論文中，我們研究且發展出薄膜鍺金氧半元件之結構。利用聰明切的技術將它轉移至聚亞醯胺軟性基板上，並且對此一型態之元件性能做出各項探討及分析。為了瞭解薄膜鍺金氧半結構於軟性電子元件之發展及應用，我們已將此結構應用於可撓式光偵測器、光生伏打電池及場效電晶體等三種重要的半導體元件上。
此外，我們建構了一種外加應變的裝置，對此元件施加單軸之伸展應變，使得薄膜鍺的能隙急遽變小，進而利用拉曼頻譜的紅位移得到應變量，並且觀察施加應變下對其光響應的影響。從此可發現到1.5微米的紅外光波段對鍺的能隙變小時會有相當大的提升，這現象驗證了鍺之光學吸收係數的特性曲線。甚至可利用溫度的改變，對此偵測器做出適當之應用。
最後，再由商業套裝軟體ANSYS模擬光偵測元件結構受到機械應變時的特性變化，進而瞭解薄膜鍺受到外加應力的情形。另外希望能將此元件的製程技術應用於薄膜矽上，加以降低鍺通道場效電晶體的製程成本，以符合現今軟性電子的需求及半導體科技之整合。

關鍵字

薄膜鍺金氧半元件 ； 聚亞醯胺 ； 可撓式光偵測器 ； 光生伏打電池 ； 場效電晶體

並列摘要

In this thesis, we have demonstrated thin film Ge MOS devices on flexible substrate as polyimide using the technique of Smart-CutTM. Furthermore, we also analysis and study various properties of this type device. In order to realize the applications of thin film Ge MOS structure of flexible electronics, we have developed flexible photodetector, photovoltaic cell, and pMOSFETs.
Moreover, new mechanic setup is constructed to apply external mechanical uniaxial tensile strain. The strain leads bandgap shrinkage. The red-shift of Raman spectroscopy can be used to extract strain. The relation between responsivity enhancements versus strain is discussed, and this phenomenon verifies the characteristic curve of optical absorption coefficient of Ge. Otherwise, we can be utilized the temperature variation to perform the GOP MOS detectors for sensing application.
Finally, we utilize ANSYS to simulate GOP photodetector with mechanical uniaxial tensile strain. Furthermore, we also hope this process can be used on Silicon-on-Polyimide substrate to reduce the cost of GOP pMOSFETs that will be more conformed to current semiconductor industry.

並列關鍵字

thin film Ge MOS device ； polyimide ； flexible photodetector ； photovoltaic cell ； pMOSFETs

參考文獻

Chapter 1

[1] C. L. Schow, R. Li, J. D. Schaub, and J. C. Campbell, IEEE J. Quantum Electron. 35, 1478 (1999).

[5] 2007 International Technology Roadmap of Semiconductors (ITRS)

[6] N. Wu, Q. C. Zhang, C. X. Zhu, C. C. Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, B. J. Cho, A. Chin, and D.-L. Kwong, “Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate,” Appl. Phys. Lett., vol. 84, no. 19, pp. 3741-3743, 2004.

[1] G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, IEEE Photon. Technol. Lett. 16, 2547 (2004).