雙向矽鍺導通二極體

Bi-directional Diode

簡意航(Yi-Hang Chien)

指導教授 ： 鄭鴻祥

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2009年)

https://doi.org/10.6342/NTU.2009.01899

摘要

由於現今半導體製程已邁向奈米時代，目前的金氧半場效電晶體在邁入後奈米時代時所遭遇之量子化現象也越來越嚴重。國際半導體技術藍圖研討會在2005年時預測現有製程到達2019年，線寬將會小到16奈米，現有的CMOS技術將不敷使用，為了因應摩爾定律，未來可能取而代之的元件可能會是奈米碳管、共振式穿隧元件、單電子電晶體、原子或自旋電子元件，而本篇論文將提出一種新穎結構製作電子元件，以期望能夠突破目前元件製作之難題。
　　一般在電子電路及半導體領域所熟知的二極體為P-N二極體，其電學行為及特性主要在於接面處所形成的位能障。然而，這篇論文的實驗目的主要是提出一種新的方法製作具有二極體行為的新穎半導體元件，其製程目的為製作雙層矽鍺皺摺型波浪微結構，此異質結構由Si_(1-x) Ge_x/Si_(1-y) Ge_y磊晶矽基材上而成，並且僅參雜III族元素硼。其傳輸電性特徵與P-N二極體行為類似，但是無論正負偏壓皆呈現二極體特性，為雙向導通二極體。而這樣的實驗發現可在未來發展中扮演另一種可檢波整流的半導體元件，並可廣泛應用於電子電路中。

關鍵字

矽鍺 ； 雙層皺褶 ； 電性量測

並列摘要

Until today, gate length of MOSFET have scaled down to nano-scale. As semiconductor process keep regenerating, ITRS predict that the channel length will smaller than sixteen nano. Process technologic followed technic of nowadays will not keep scaling down. In order to follow Moor’s law, nano carbon tube, resonant tunneling device, spin FET, atomic or spin electronic device will be a solution to this problem. This paper propose a novel structure becoming electronic device to solve this problem.
　　Semiconductor diode is made of P-N junction and its electrical properties are characterized by its energy barrier at the junction. Here, we report a new type of diode structure based on wrinkled nanostructure fabricated by standard processing. Wrinkling SiGe thin film is a novel structure. So we don’t have too much about this structure. But we anticipate that this structure will be applied to semiconductor device. The structure is built upon Si1-xGex/Si1-yGey hetero-structure with only boron-doping. The current-voltage exhibits the characteristic of diode behavior with both positive and negative bias. The present investigation provides an alternative approach for the electrical diode which is widely employed in the circuitry.

並列關鍵字

SiGe ； Bi-layer ； wrinkle ； electrical properties

參考文獻

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