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  • 學位論文

K頻段互補式金氧半導體功率放大器之自動調整偏壓技術研究

Research on Adaptive-Bias Technique for K-Band CMOS Power Amplifier

指導教授 : 林坤佑

摘要


這篇論文題出一個可以使用在K頻段的自動調整偏壓技術,它可以改善互補式金氧半導體功率放大器在小於1-dB壓縮點時的效率。這個自動調整偏壓電路使用一個N型金氧半導體電晶體當作一個會隨著輸入功率而自動可變的電阻,並藉此可變電阻來控制共源級放大器的閘極偏壓。文中分析了此電路的操作原理及細節,並與已發表的其他自動調整偏壓技術做比較。也分析此自動調整偏壓電路的特性來對功率放大器做最佳化的設計。此外,它的使用限制及可調範圍也在此論文中提及。 我們使用180奈米互補式金氧半導體來製作一個使用自動調整偏壓技術在K頻段的兩級放大器。量測的結果,此功率放大器在靜態只有58.6毫瓦的功耗,而在1-dB壓縮點前6 dB的操作點有8.7%的功率附加效率。並且,其具有9 dB的小訊號增益、15.8 dBm的飽和輸出功率以及在1 dB 壓縮點有13.9 dBm的輸出功率和14%的功率附加效率。這是在所有發表過的電路中,使用180奈米互補式金氧半導體製程在1-dB壓縮點前6 dB的操作點有最高附加效率的K頻段功率放大器。

並列摘要


In this thesis, a new adaptive-bias technique is proposed to enhance the back-off efficiency of the K-band CMOS power amplifiers. This technique uses a transistor to be a variable resistor which is automatically adjusted by the input power. The operation detail of the adaptive-bias circuit is investigated, and the comparison of this new technique and the other previously reported adaptive-bias techniques is provided. The characteristics of the adaptive-bias circuit are analyzed and are optimized for the performance of power amplifiers. Besides, the limitation and the adjustable range of this adaptive-bias technique are also mentioned in the analysis. A K-band power amplifier with the proposed adaptive-bias technique is fabricated in 0.18-um CMOS technology. According to the measurement, the proposed PA only consumes 58.6 mW at quiescent state and has 8.7% at the power of 6-dB back-off from P1dB. Compared with the fixed-bias Class-A PA that consumes 90 mW at quiescent state, the proposed PA saves 35% power consumption. The power-added-efficiency at OP1dB is 14% while maintaining 9-dB small-signal gain, 13.9-dBm OP1dB and 15.8-dBm Psat. It is the highest efficiency at the power of 6-dB back-off from P1dB among the reported 0.18-um CMOS power amplifiers above 20 GHz.

參考文獻


[3] S. C. Cripps, RF Power Amplifier for Wireless Communications. Boston, MA: Artech House, 1999.
[1] “Revision of Part 15 of the Commission’s Rules Regarding Ultra-wideband Transmission Systems,” FCC, Washington, DC, ET Docket 98-153, Feb 14, 2002.
[4] J. C. Pedro and N. B. Carvalho, Intermodulation Distortion in Microwave and Wireless Circuits. Norwood, MA: Artech House, 2003.
[6] C. Hsia, D. F. Kimball, and P. M. Asbeck, “Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs,” IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, Mar. 2011, pp. 69-72.
[7] C. L. Chen, C. L. Keast, “X-band fully deleted SOI amplifier with adaptive bias control”, IEEE Microw. Wireless Compon. Lett., vol. 15, no. 7, pp. 451-453, July 2005.

被引用紀錄


Ho, C. J. (2013). 自適應偏壓功率放大器及變壓結合式功率放大器 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.10605

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