- 學位論文
矽基底金氧半發光二極體之研究
Study of Si-based Metal-Oxide-Semiconductor Light Emitting diodes
摘要
以矽基板做為發光材料，較容易與超大型積體電路整合，並能有效解決現今電子元件尺寸越做越小，隨之而帶來的元件與元件在資料傳輸上，所造成的外部延遲問題，因而本論文致力於金氧矽發光二極體的特性研究，並嘗試在矽基板上製作共振腔。首先，將二氧化矽奈米粒子旋塗於矽基板上，將此薄膜當作氧化層，在氧化層與矽基板間產生奈米等級載子侷限的效果，使得發光效率提升，這是實驗上簡易且效率也不錯的元件之ㄧ。再來，比較FZ與CZ矽基板上製作發光元件上的差異，並提出新的論點，說明CZ矽基板也可拿來做為發光元件材料，逐漸取代以往使用高品質且價格較高的FZ矽基板。接著，量測元件光特性，觀察到在高注入電流下，不常見的光功率飽和現象，為了解現象產生的原因，使用理論模型模擬與分析，探討光功率飽和現象的起因。有鑒於在2000年與2004年觀察到近似矽雷射的現象，學習已在市場上量產的發光二極體與雷射結構，著手進行在矽基板上製作費比-白洛腔，預期光子或是聲子在腔體裡進行共振，並討論製程上所遭遇的困難。最後，提出在製程中可能提高發光效率的步驟，期待著矽雷射帶給積體電路工業的躍進。
並列摘要
Using silicon as the light emitting material, it can be easily integrated with the ultra large-scale integrated (ULSI) circuit .As the dimension of devices in the silicon ULSI is scaled down, it also brings up the problem of the time delay among components. Therefore, silicon light emitting sources provide an effective solution for data transmission. This thesis is devoted to the study of metal-oxide-silicon light emitting diodes (LEDs). First of all, SiO2 nano-particles as the oxide layer are spun upon the silicon substrate. The roughness between silicon and oxide layer results in nano-scale carrier confinement. Because of nano-scale carrier confinement, light efficiency is raised. It is a simple fabrication method. The components have good light emission efficiency. Then, comparison of the difference between FZ wafers and CZ wafers gives us the new point that CZ wafers can also be a material for light emitting component. Although FZ wafers have high quality, they still cost higher in price than CZ wafers. Because the quality of CZ wafers is improved in the past years, there is a tendency of replacing FZ wafers with CZ as a light emitting component. In the experiments, we observe optical power saturation phenomenon in high injection currents. In order to understand the reason why the phenomenon happens, we use a theoretical model to simulate and analyze the measurements. According to the theoretical investigation, the cause of the phenomenon is that lattice temperature is raised as the injection current increases. Because near lasing actions from Si-based light sources were observed in 2000 and 2004, we tried to fabricate Farby-Perot cavities for Si lasers similar to III-V-based laser diodes in our Lab .The fabrication conditions are experimentally studied. The difficulty in the cavity fabrication is addressed. Finally some possible improvements are proposed in the hope that Si-lasers can be realized and lead to a great impact on the industry of USLI in the future.