矽奈米結構與矽發光效率之關係研究

Study of Silicon Luminescence Efficiency using Silicon Nano-Structures

黃昭睿(Chao-Jei Huang)

指導教授 ： 林清富

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.00397

摘要

矽光源儼然已成為現今超大型積體電路中最迫切需要的元件，在未來不論是在工業上或是科學上都扮演了舉足輕重的角色。本論文即著眼於使用矽奈米結構來提高矽材發光效率之研究，以求早日達到成為一可應用光源並可整合融入現今超大型積體電路製程的目標。
針對未來矽光源與積體電路的整合需求，我們提出了使用金氧半結構作為發光元件的做法，並成尼Q用二氧化矽奈米粒子提高放光性複合的比例，而使得金氧半結構發光元件在室溫下的外部量子效率提高到1.5×10-4，並成左漲b金氧半結構發光元件上觀測到近似矽雷射的現象。
在本論文中，為求達到比二氧化矽奈米粒子更好的量子侷限效果，我們嘗試著將奈米結構直接製作於矽材表面，當然我們也成左漲b矽材表面製作出矽奈米柱狀結構，而這中間包括了奈米等級遮罩、奈米等級蝕刻等等重要的奈米製程技術，相信我們的奈米結構製程經驗對未來的奈米機電將可提供釵h寶貴的資料。
雖然到目前為止我們的矽奈米結構金氧半發光元件還未再度提高發光效率，但我們卻在矽奈米結構中觀測到了頻寬縮小的現象，而這現象不僅意味著有可能在矽材上出現BEC現象，也是未來可能在室溫下達成矽材雷射的先驅。
最後，我們也嘗試在矽材上製作奈米等級的PN接面來做為發光元件，希望利用大量的載子可在相同電流下提高複合放光的載子數目，進而提高發光效率。不過首要解決的問題就是在製作PN接面時所遭遇到的熱應力破壞矽晶格的問題，在本論文中我們大略的估算出了溫差與矽晶格內所產生之缺陷數目間的關係，而這也是目前業界在半導體製程中非常關心的問題。在本論文中我們也初步的解決了熱應力的問題，希望在未來的努力下可以完全解決熱應力的問題，屆時將是矽材發光效率再度提升的時候。

關鍵字

矽發光效率

並列摘要

Silicon light source is the most urgent need device in the VLSI nowadays, and will play an important role not only on the science but on the technology for future. This thesis aim at the research of using silicon nanostructure to enhance the external quantum efficiency of silicon, we hope this device will become an applicable light source and can be integrated in the VLSI for future.
We proposed a new method for silicon light source by using MOS structure, and enhanced the ratio of radiative recombination by using silicon dioxide nanoparticles successfully. The external quantum efficiency of the MOS-LED can achieved to 1.5×10-4, and the near silicon laser phenomenon had been observed successfully.
In this thesis, we fabricate the silicon nanopillar on the silicon surface successfully, which include many detailed and important recipes like the nano-scale mask and the nano-scale etching...etc, and we believe those experiments will give huge contribution to the nano-electro-mechanical- systems(NEMS) for future.
Although we still not enhance the external quantum efficiency of the silicon material again up to now, we observe the phenomenon of reducing the silicon luminescence spectrum width by silicon nanostructure, this observation not only implicate the possibility of observing the Bose-Einstein Condensation phenomenon on silicon , but achieving the silicon laser for future.
Finally, we try to fabricate the nano-scale P-N junctions in silicon for silicon light source, we hope this method can enhance the external quantum efficiency of silicon material again by a large number of carriers can generate more carrier numbers of radiative combination. The first key point is to solve the problem of causing damages in the silicon lattices during the thermal treatment process because of the thermal stress. In this thesis, we find the relationship between the temperature difference and the number of defects in the silicon lattices roughly, and we also solve the problem of thermal stress during the thermal treatment process when the thermal treatment temperature below 800oC. If we can solve this problem completely, we will be able to enhance the external quantum efficiency of silicon material again for future, and give a huge contribution to the semiconductor fabrication technology.

並列關鍵字

Silicon Luminescence Efficiency

參考文獻

Miin-Jang Chen, and Ching-Fuh Lin, “The roughness-

Electroluminescence from Metal-Oxide-Silicon Tunneling

[25]Ching-Fuh Lin, Eih-Zhe Liang, Sheng-Ming Shih, and

Ching-Fuh Lin, “Room-Temperature electroluminescence

tunneling diodes,” Appl. Phys. Lett., 76, pp. 1516-1518,