用於有機發光元件的低溫多層保護膜及均勻狀多晶矽薄膜電晶體

The Low Temperature Multilayer Passivation Films and The Uniform Poly-Si Grain Thin Film Transistors with Application to Organic Light Emitting Diode

薛淳元(Chun-Yuan Hsueh)

指導教授 ： 李嗣涔

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.01413

摘要

主動式矩陣有機發光元件(AMOLED)至今仍有兩個重要問題需要解決。首先是用來保護上發射有機發光元件的保護膜，第二個則是具備均勻性且電性良好之多晶矽薄膜電晶體。經由電漿化學氣相沉積法所沉積之非晶氮化矽薄膜由於具有較高之光能階以及防水氧穿透等特性，被當作上發射有機發光元件的保護膜。此
非晶氮化矽薄膜最佳的反應氣體比例為：Ar稀釋濃度10 %的SiH4 10 sccm，NH3 3 sccm以及N2 197 sccm。薄膜光能階可大於3 eV，反應溫度可以低至60℃，而且在離開反應腔體經過3000小時後，薄膜本身並無任何衰退等現象發生，再配合聚對二甲基苯（parylene C）製作多層保護膜實際應用在有機發光元件上，可達到更佳的保護效果。
本論文發展出製作均勻且大晶粒多晶矽之方法。非晶矽在其上設置金屬(鉻/鋁)正方形週期排列經過雷射退火後，可以有效改善所製成薄膜電晶體之電性均勻度。而且其最好之開/關電流可以達到6個數量級，最好之場效電子遷移率可以達到180 cm2/V-sec。

關鍵字

薄膜電晶體

並列摘要

Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good performance. The a-SiNx film with high optical gap and impermeability fabricated by plasma enhanced chemical vapor deposition (PECVD) has been chosen as the passivation layer. The optimum ratio of reaction gas is Ar-diluded 10 % SiH4 10 sccm, NH3 3 sccm, and N2 197 sccm. The optical gap is higher than 3 eV and deposition temperature could be as low as 60℃ and the film doesn’t show any degradation after removing from the growth chamber for 3000 hours. Combining parylene-C layers and a-SiNx:H layers to form multilayer passivation films on OLED device exhibit a better performance. A method to prepare uniform and large grain size poly-Si was developed. The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with squarelattice metal (Cr/Al) pads on top has been substantially improved. The best on/off current ratio could reach 6 order of magnitude and the mobility could attain 180 cm2/V-sec.

並列關鍵字

TFT ； passivation

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