用於有機發光元件的低溫非晶氮化矽薄膜及均勻狀多晶矽薄膜電晶體

The Low Temperature a-SiNx Passivation Films and The Uniform Poly-Si Grain Thin Film Transistors with Application to Organic Light Emitting Diode

張旭佑(Hsu-Yu Chang)

指導教授 ： 李嗣涔

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.01506

摘要

至今主動式矩陣有機發光元件(AMOLED)仍有兩個重要問題需要解決。首先是用來保護上發射有機發光元件的保護膜。第二個則是具備均勻性且電性良好之多晶矽薄膜電晶體。經由電漿化學氣相沉積法所沉積之非晶氮化矽薄膜由於具有較高之光能階以及防水氧穿透等特性，被當作上發射有機發光元件的保護膜。此
非晶氮化矽薄膜最好之反應氣體比例為SiH4:NH3:N2 = 10:3:197 sccm，光能階可大於3 eV，反應溫度可以低至70℃，而且在離開反應腔體經過5000小時後，薄膜本身並沒有任何衰退等現象發生。一個製作均勻且大晶粒之新方法已經被研究出。具備金屬(鉻/鋁)光子晶體排列的非經矽經過雷射退火後，所製成之薄膜電晶體之電性均勻度已經被有效改善。而且其最好之開/關電流可以達到8個數量級，最好之場效電子遷移率可以達到354 cm2/V-sec。最後比較鉻/鋁以及鋁金屬光子晶體排列之非晶矽薄膜經雷射退火後之薄膜電晶體特性，證實鉻可以有效防止鋁擴散進入矽。

關鍵字

氮化矽 ； 多晶矽 ； 薄膜電晶體

並列摘要

Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good performance. The a-SiNx film with high optical gap and impermeability fabricated by plasma enhanced chemical vapor deposition (PECVD) has been chosen as the passivation layer. The optimum ratio of reaction gas is SiH4:NH3:N2 = 10:3:197 sccm. The optical gap is higher than 3 eV and reaction temperature could be as low as 70℃ and the film doesn’t show any degradation after removing from the growth chamber for 5000 hours. A new method to prepare uniform and large grain size poly-Si was discovered. The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with metallic (Cr/Al) photonic crystal structure has been substantially improved. The best on/off current ratio could reach 8 order of magnitude and the mobility could attain 354 cm2/V-sec. After comparing the Cr/Al with Al photonic crystal pads, the Cr could efficiently impede the diffusion of Al into Si.

並列關鍵字

silicon nitride ； poly Si ； thin film transistor

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