硫化三正辛基磷表面處理銅銦鎵硒薄膜太陽能電池及 混合式主體材料之藍色磷光有機發光二極體

Surface passivation of Cu(ln1-xGax)Se2 thin film solar cells with trioctlyphosphine:sulfide and blue phosphorescent organic light-emitting diode with mixed host

林傳恩(Chuan-En Lin)

指導教授 ： 李君浩

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.01167

摘要

本論文主要為以硫化三正辛基磷於銅銦鎵硒薄膜及元件上之表面鈍化處理並探討其機制及以不同之主體材料實現高效率藍光磷光元件。
我們利用硫化三正辛基磷 (Trioctlyphosphine:Sulfide)來進行銅銦鎵硒薄膜及元件上之表面鈍化處理並探討其機制。在薄膜方面，我們藉由穩態光激發光頻譜及時間解析光激發光頻譜檢測鈍化處理之效果。在最佳化鈍化處理之溫度及時間參數後 (120 oC, 6 hr)，我們有效提升銅銦鎵硒薄膜之光激發光強度 (18.0倍)及載子壽命 (3.0倍)。元件方面，我們透過鈍化處理補償元件切割所產生之缺陷，並有效提升元件效率 (1.3%)、短路電流 (1.0%)及並聯電阻 (40.0%)。並將鈍化處理導入元件製程，透過表面及側向缺陷、懸浮鍵補償，有效降低元件漏電流並提升元件效率 (1.4%)、短路電流 (6.5%)及並聯電阻 (8.3%)。
我們以3,-phenyl-4(1’-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) 當作主體材料並摻雜iridium bis(4,6-di-fluorophenyl- pyridinato-N,C2,)picolinate (FIrpic)為客體材料製作藍色磷光元件，藉由調變電子傳輸層、發光層厚度及摻雜濃度等，進而實現一電流效率42.01 cd/A 及功率效率 32.66 lm/W 的藍光元件，接著引入N,N’-dicarbazolyl-2,5-benzene (mCP) 製作混和式主體材料之藍光元件，藉由調整主體材料比例、電子傳輸層、電洞傳輸層、發光層厚度等，實現一效率達47.22 cd/A及31.66 lm/W，外部量子效率達21.22%。
另外，我們亦測試了由台大化學所梁文傑實驗室所提供之三種主體材料並製作藍光磷光元件，透過調整客體摻雜進而實現一最佳元件效率。其最佳電流效率、功率效率及外部量子效率分別為: 43.96 cd/A、 34.53 lm/W 及 18.50% (Cbz-oxd)、39.68 cd/A、 31.50 lm/W 及 14.90% (Cbz-bim)、41.05 cd/A、 32.24 lm/W 及 16.54% (Cbz-taz)。

關鍵字

混合式主體材料；表面鈍化；銅銦鎵硒薄膜太陽能電池

並列摘要

In this thesis, we studied the surface passivation of Cu(ln1-xGax)Se2 thin films and solar cells with trioctlyphosphine:sulfide (TOP:S), and realized a high efficiency blue phosphorescent OLEDs with different host materials.
We used tricotlyphosphine:sulfide (TOP:S) to passivate CIGS thin film and CIGS solar cell. After TOP:S passivation (6 hr, 120 oC), optical intensity of steady state photoluminescence (PL) of CIGS thin film effectively enhanced 18.0 times and minority carrier lifetime (obtained from transient PL) improved 3.0 times. It means that TOP:S can effectively compensate the defects, impurities and dangling bonds on CIGS surface. For CIGS solar cell, we used TOP:S passivate the scribe induced damages and effectively improved device efficiency (1.3%), Jsc (1.0%) and Rsh (40%). When adding TOP:S passivation into a standard CIGS solar cell process before CdS CBD process, almost one order leakage current was improved after TOP:S passivation and enhancement of Jsc, PCE and Rsh were 6.5%, 1.4% and 8.3%, respectively.
We used 3,-phenyl-4(1’-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) as host material and doped iridium bis(4,6-di-fluorophenyl- pyridinato-N,C2,)picolinate (FIrpic) to fabricate the blue phosphorescent OLEDs, which could achieve current efficiency of 42.01 cd/A and power efficiency of 32.66 lm/W via tuning the thickness of electron transporting layer (ETL), emitting layer (EML) and the doping concentration. Furthermore, we introduced N,N’-dicarbazolyl-2,5-benzene (mCP) into the device structure to fabricate the blue phosphorescent OLEDs with mixed host. Via the tuning of mixed ratio of host, the thickness of ETL , the thickness of HTL and the thickness of EML, the high current efficiency of 47.22 cd/A, power efficiency of 31.66 lm/W and external quantum efficiency of 21.22% were obtained. Furthermore, we tested three carbazole-containing biphenyls derivatives host (Cbz-oxd, Cbz-bim and Cbz-taz) which were synthesized by Prof. Man-kit Leung’s research group. Current efficiency, power efficiency and external quantum efficiency of three host materials achieved 43.96 cd/A, 39.68 cd/A and 41.05 cd/A, 34.53 lm/W, 31.50 lm/W and 32.24 lm/W, 18.50%, 14.90% and 16.54%, respectively.

並列關鍵字

Mixed host； surface passivation； CIGS thin film solar cell.

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