應用於毫米波金氧半場效電晶體低雜訊放大器與壓控振盪器之研製

Design of Millimeter-wave CMOS LNA and VCO

鄭伊佐(Jeffrey Ronald Tseng)

指導教授 ： 林坤佑

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2010年)

https://doi.org/10.6342/NTU.2010.02513

摘要

由於現代通訊系統資料傳輸量的需求與日俱增，在毫米波頻段的高頻無線通訊系統成為熱門的研究主題。而近年來因半導體製程的研發與成長迅速，使用次微米製程技術研究毫米波高頻段無線通訊的關鍵元件是一個非常值得探討的主題。其中由於互補式金氧半導體製程(CMOS)具備低價格與高度積體化的優點，因此特別受到注目。
本論文的主題在於利用65奈米互補式金氧半導體製程，分別設計與實現出無線通訊系統中低雜訊放大器，與電壓控制振盪器這兩種關鍵元件。論文主要可以分成三大部分，第一部份介紹無線通訊系統的基本原理介紹和各關鍵元件的重要性。第二部份討論各個關鍵元件的基本原理和電路設計，本論文提出一個低雜訊放大器，電壓控制振盪器。並說明其架構及設計的原理。第一個電路使用台積電65奈米互補式金氧半導體製程，成功的實現一個操作頻率為68至75 GHz 的低雜訊放大器，可達到17 dB的增益和7.4 dB的雜訊係數。第二個電路也是使用台積電65奈米互補式金氧半導體製程，為了得到較好的相位雜訊，改變了傳統的LC共振腔結構，改良其品質係數，成功的實現一個振盪在55.6 GHz，控制電壓可調頻率範圍可達2%的振盪器，其相位雜訊可達到1-MHz位移(offset)時具有-96 dBc/Hz，且只需消耗5 mW的直流功率。論文的最後一個部份為兩個電路的總結和本論文的結論。

關鍵字

低雜訊放大器 ； 壓控振盪器

並列摘要

Due to the increasing demand of higher data rate of the modern communication system, wireless communication system in millimeter-wave has become an important topic of interest. Recently, due to the rapid growth of the foundry process, it’s an essential topic to utilize sub-micron process to realize the high frequency essential element of the wireless communication system. Complementary metal-oxide-silicon field-effect transistors (CMOS) is the most attractive process because of its advantages as low cost and high integrity. The goal of the thesis is to utilize 65-nm CMOS process to design and realize the two essential elements of the wireless communication system, low noise amplifier and voltage control oscillator. Firstly, the basic of the wireless communication system is introduced. Secondly, the basic principle and circuit design of each essential element are introduced. The thesis proposes a low noise amplifier and a voltage control oscillator as the structure and design method. The first circuit utilizes TSMC 65-nm CMOS process to realize a low noise amplifier in 68-75 GHz, with a gain of 17 dB, and a noise figure of 7.4 dB. The second circuit also utilizes TSMC 65-nm CMOS process to realize a voltage control oscillator. In order to reach a better phase noise performance, conventional LC resonator is transformed to improve its quality factor. An oscillator, operating at 55.6 GHz, with a tuning range of 2%, is realized. Under 5 mW DC power consumption, it reaches a phase noise performance as -97 dBc/Hz at 1-MHz offset.

並列關鍵字

LNA ； VCO

參考文獻

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