高輝度與高同調性之光罩缺陷繞射檢測系統應用於13.5 nm極紫外光微影製程之研究

Study of high brilliance and high coherence mask defect diffractive detection system applied on 13.5 nm EUV lithography process

楊淳復(Chun-Fu Yang)

指導教授 ： 李佳翰

國立臺灣大學/工學院/工程科學及海洋工程學研究所/碩士(2014年)

https://doi.org/10.6342/NTU.2014.10959

摘要

極紫外光微影技術是22奈米節點以下之次世代微影製程技術中的主流技術之一，由於積體電路的快速發展，製程所需的線寬尺寸越來越小，極紫外光微影被視為次世代微影中極具潛力的方法，然而在半導體的製造過程中，任何在光罩上的缺陷都將可能造成印刷上的錯誤與增加多餘成本，因此需要一套完善檢測光罩缺陷的系統，幫助無缺陷光罩的製造。而相較於現今的深紫外光波長為193奈米，運用極紫外光的微影技術其波長為13.5奈米，因此元件可靠度與光罩光阻等均與目前的技術有極大的差異。
在本文中，我們以新竹國家同步輻射中心之Beamline19A2作為光源，於真空腔體內設計並架設一套極紫外光光罩檢測系統，用以檢測光罩上的缺陷，並建構了同調散射顯微鏡用於EUV光罩檢測系統的架設以及程式技術的研發，以此套系統為基礎，用於日後學術界與產業界製造22奈米節點以下之製程應用，提供快速與高解析光罩或光阻微影品質之檢測。

關鍵字

極紫外光微影 ； 同調繞射影像術 ； 同調性散射顯微鏡 ； 極紫外光光罩 ； 次世代微影

並列摘要

EUV lithography is one mainstream technology in the next generation of lithography technology below 22nm node. Due to the rapid development of integrated circuits, the width dimension required in processing is smaller and smaller and EUV lithography is considered as one of the great potential methods in the next generation of lithography technology. However, in the manufacturing process of semiconductors, any defects in the mask will possibly cause printing errors and increase the excess costs. Therefore, a perfect mask defect detection system is needed to help the manufacturing of the mask without defects. Different from today's deep ultraviolet (l = 193nm), the extreme ultraviolet lithography is used. Since the wavelength is 13.5nm, the device reliability, the mask photoresist, etc. have great differences from current technology.

In this study, the beamline19A2 of National Synchrotron Radiation Research Center in Hsinchu was adopted as a light source. In a vacuum chamber, a set of EUV mask inspection system was designed and erected to detect defects on the mask. In addition, the coherent scattering microscopy was constructed to complete the erection and technology research and development of the EUV mask inspection system. This system will be used in the process applications by academia and industry to manufacture 22nm node and below, thus providing detection of the fast and high-resolution mask or Line edge roughness (LER) in photoresist lithography quali.

並列關鍵字

extreme ultraviolet lithography ； coherent diffractive imaging ； coherent scattering microscopy ； extreme ultraviolet (EUV) mask ； next generation lithography

參考文獻

[1] G. E. Moore, “Cramming more components onto integrated circuits”, Electronics 38, No. 8, April 19, 1965.

[2] International Technology Roadmap of Semiconductors (ITRS) , http://www.itrs.net/events.html.

[3] John E. Bjorkholm, “EUV Lithography - The Successor to Optical Lithography ”,Intel Technology Journal Q3’98

[4] 龍文安, “半導體奈米技術”, 2010.

[5] Peter J. Silverman, “Extreme ultraviolet lithography: overview and development status”, J. Microlith., Microfab., Microsyst., 2005.