矽鍺功率放大器隔離技術與太陽能電池特性模擬

Isolation Technique for SiGe Power Amplifiers and Simulation of Solar Cell Characteristics

林哲永(Che-Yung Lin)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.10277

摘要

在本論文中，首先將介紹用於雙功率放大器間的隔離技術。對於雙功率放大器隔離度而言，在經過第一次的雷射切割後等效的耦合效應量為-27.2dB，經過第二次雷射切割後等效的耦合效應量為-29.25dB，只開啟上半部功率放大器、上下部功率放大器同時開啟及下半部功率放大器輸入功率大於上半部10dBm時的第一次雷射切割後所量得的EVM分別為11.4dBm、8.9dBm及7.8dBm，而經過第二次雷射切割後的EVM分別為15dBm、13.9dBm及9.8dBm。若操作在單一功率放大器時，其線性增益為18.6dB，1dB壓縮點功率為25.3dBm，壓縮點增加效益為16.7%。其次，使用ISE軟體來進行太陽能電池特性的模擬。利用量測商用太陽能電池的電性特性來建立ISE模擬中的模型，並針對參雜濃度、電極寬度及間距、奈米級表面結構來進行太陽能效率的最佳化模擬。

關鍵字

功率放大器 ； 太陽能電池

並列摘要

In this thesis, an isolation technique for dual power amplifiers is introduced. For the isolation of dual power amplifiers, the equivalent coupling effect at 2.45GHz before laser cut is -24.7dB, after first laser cut is -27.2dB and after second laser cut is -29.25dB. The EVM at 3% criterion after first laser cut of standalone condition is 11.4dBm, of equal power is 8.9dBm and of 10dB larger input power from down-PA is 7.8dBm. After second laser cut the EVM at 3% criterion of standalone condition is 15dBm, of equal power is 13.9dBm and of 10dB larger input power from down-PA is 9.8dBm. The small signal gain, P1dB and PAE at P1dB are 18.6dB, 25.3dBm and 16.7%, respectively. By measuring electrical characteristics of commercial solar cells, the solar cell model can be established in ISE. Furthermore, the optimization simulations of doping profile, finger width and spacing and nano texture are performed.

並列關鍵字

SiGe ； power amplifier ； solar cell

參考文獻

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