應用於毫米波波段之砷化鎵低雜訊放大器之設計與毫米波發射器元件與系統構裝之研究

Design of GaAs Low Noise Amplifier at Millimeter Wave and Research on Millimeter Wave System Package and Key Components

李祐棠(You-Tang Lee)

指導教授 ： 王暉

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.02348

摘要

在這本論文中，展示一個E-band低雜訊放大器和一個W-band寬頻三倍頻器
晶片的設計與量測成果，以及60 GHz發射器系統的整合與量測。
首先是預計應用在天文觀測 E-band頻段接收機上， 利用高速電子遷移率電晶
體設計的低雜訊放大器，設計工作範圍為 60至77 GHz，設計過程中使用自建的小訊號模型進行模擬，模擬結果與量測結果相當符合，證實小訊號模型的準確性。
接著是預計作為 W-band 訊號源的寬頻三倍頻器，使用的製程為65奈米金氧
半場效電晶體，此三倍頻器透過變壓器進行極間阻抗匹配，量測的結果與模擬也
相當符合，最高的轉換增益可達到1 dB，3 dB 頻寬輸出範圍為57至78 GHz，達到31% 的比例頻寬。
最後則是60 GHz發射器系統的系統整合與量測，系統內電路使用65 奈米金
氧半場效電晶體製作，透過低溫共燒多層陶瓷(LTCC)組裝，與被動元件如天線、
偏壓電路整合在一起 ；發射器的量測結果展示28 dB的小訊號增益，輸出飽和功率
大於7 dBm和大於3 dBm的1 dB增益壓縮時的輸出功率(OP 1dB)。

關鍵字

低雜訊放大器 ； 高速電子遷移率電晶體 ； 寬頻 ； 三倍頻器 ； 發射器 ； V 頻段 ； 金氧半場效電晶體

並列摘要

In this thesis, we demonstrate the design and measurement results of an E-band low noise amplifier (LNA) and a W-band wideband tripler. Furthermore, the integration and measurements result of a 60 GHz transmitter system are also demonstrated.
First part is the low noise amplifier used in the application of radio astronomical telescope E-band receiver. The LNA is designed and fabricated in high electron mobility transistor using small-signal model. Targeted working range is 62 to 77 GHz. The measurement result and simulation result are in good agreement with each other, proving the accuracy of the model.
The next is a frequency tripler, which will be used as a W-band signal source, fab-ricated in 65-nm advanced CMOS technology. Transformer is used in this tripler to achieve impedance matching between stages. The measured performance fit well with simulation. Peak conversion gain of the tripler is larger than 1 dB, with 3 dB bandwidth from 57 to 78 GHz, which is 31 % of fractional bandwidth.
The last part is integration and measurement of a 60 GHz transmitter system. Sys-tem circuits are fabricated in 65-nm CMOS technology. System is packaged in low temperature co-fired ceramic (LTCC), and integrated with passive components such as antennas and bias network. It shows small signal gain of 28 dB, saturation power larger than 7 dBm and output power at 1 dB compression over 3 dBm.

並列關鍵字

Low Noise Amplifier (LNA) ； HEMT ； Broadband ； Frequency Tripler ； Transmitter ； V-band ； CMOS

參考文獻

[8] 何柄翰撰，應用於毫米波波段之砷化鎵與矽鍺放大器之設計與砷化鎵微波元件常溫與低溫模型之研究，國立台灣大學電機工程研究所碩士論文，2013。

[38] 楊耀嘉撰，V頻段發射器與向量疊加式相移器之研究，國立台灣大學電機工程研究所碩士論文，2013。

[2] Massimo Tarenghi, “The atacama large millimeter/submillimeter array: overview & status,” Astrophysics and Space Science, vol 313, 1-7, Jan. 2008.

[4] Federal Communications Commission, Technical Report Section 15.255 [Online]. Available: http://transition.fcc.gov/oet/info/rules/

[6] You-Tang Lee, Chau-Ching Chiong, Dow-Chih Niu, and Huei Wang, “A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy appli-cations,” European Microwave Conference (EuMC), pp. 1400-1403, Oct. 2014.