並聯多級功率放大器及功率結合技術

Parallel Multiple Stages Power Amplifier and Power Combining Technique

林伯聰(Po-Tsung Lin)

指導教授 ： 劉致為

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.10327

摘要

在本論文中，我們介紹了各種不同類別的功率放大器以及數種功率放大器的效率增進技術。更進一步，本論文設計與製作了數個以金氧半與矽鍺製程製作且供無線通訊應用的功率放大器。以0.18微米金氧半製程製作的自我偏壓串聯功率放大器，達成了15.3 dB的線性增益、18.8 dBm的飽和功率、17.7 dBm的1dB壓縮點以及25.6 %的功率增加效率；以0.35微米矽鍺製作的並聯多功率級功率放大器，在模擬上高功率級有28.7 dB的線性增益、28.9 dBm的飽和功率、26.6 dBm的1dB壓縮點以及41 %的1dB壓縮點增加效率，而低功率級則有27.5 dB的線性增益、22.3 dBm的飽和功率、21.8 dBm的1dB壓縮點以及31.6 %的1dB壓縮點增加效率；同樣以0.35微米矽鍺製作的具功率結合器功率放大器，達成了14 dB的線性增益、28.5 dBm的飽和功率、27.9 dBm的1dB壓縮點以及22.6 %的1dB壓縮點增加效率。此外，在本論文中我們也說明了這些不同架構的功率放大器各自的設計概念、設計流程與使用印刷電路版的量測方式。

關鍵字

並聯多級 ； 功率放大器 ； 功率結合技術

並列摘要

In this thesis, some different classifications and efficiency enhancement techniques of power amplifiers are introduced. Furthermore, some CMOS and SiGe power amplifiers used for wireless communication applications are designed and fabricated. For 0.18μm self-biased cascade CMOS power amplifier, it achieves 15.3 dB linear gain, 18.8 dBm Psat, 17.7 dBm P1dB, and 25.6 % PAE@P1dB; For 0.35μm parallel multiple power-stages SiGe power amplifier, in simulation, it achieves 28.7 dB linear gain, 28.9 dBm Psat, 26.6 dBm P1dB, and 41 % PAE@P1dB in high power stage, and 27.5 dB linear gain, 22.3 dBm Psat, 21.8 dBm P1dB, and 31.6 % PAE@P1dB in low power stage; For 0.35μm SiGe power amplifier with power combiner, it achieves 14 dB linear gain, 28.5 dBm Psat, 27.9 dBm P1dB, and 22.6 % PAE@P1dB. In addition, each design concepts and flows of these power amplifiers with different structures and the measurement method with PCB module are described in this thesis.

並列關鍵字

Parallel Multiple Stages ； Power Amplifier ； Power Combining Technique

參考文獻

[1] T.S. Rappaport, “Wireless Communications Principles and Practice 2nd edition,” Prentice Hall, 2002.

[2] S.C. Cripps, “RF Power Amplifiers for Wireless Communications,” ARTECH HOUSE, 1999.

[4] N. Sokal and A. Sokal, “Class E, a New Class of High Efficiency Tuned Single-Ended Switching PAs,” IEEE Transactions on Power Electronics, vol. 9, pp. 290-308, May 1994.

[5] F.H. Raab, “Maximum Efficiency and Output of Class-F Power Amplifiers,” IEEE Transactions on Microwave Theory and Technique, vol. 49, pp. 1162-1166, June 2001.

[6] S.D. Kee, et al., “The Class-E/F Family of ZVS Switching Amplifiers,” IEEE Transactions on Microwave Theory and Technique, vol. 51, pp. 1677-1690, June 2003.