實現於10與24GHz雙頻帶放大器的雙頻帶阻抗轉換技術

Dual-Frequency Impedance Transformation Technique Incorporated in a 10 and 24 GHz Dual-Band Amplifier

謝凱安(Kai-An Hsieh)

指導教授 ： 莊晴光

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2011年)

https://doi.org/10.6342/NTU.2011.02846

摘要

本論文討論以傳輸線為基礎所設計之雙頻帶阻抗轉換技術，並根據所提出理論，於0.13微米互補性金屬氧化物半導體(CMOS)製程上，實做完成一個同時操作於10 GHz與24 GHz的雙頻帶放大器。
本論文根據目前文獻中關於雙頻帶阻抗轉換技術的研究，深入探究其所隱含之物理意義，並針對該理論所面臨的限制提出解法，使其完備性擴充至任意頻率且任意阻抗的應用上。為避免積體電路之製程限制影響此理論的實做可行性，於此雙頻帶放大器之設計上，充分利用互補式金屬傳輸線(CCS TL)之特性以求達到較大之傳輸線特性阻抗範圍。雙頻帶阻抗轉換之理論應用於此放大器的輸入、輸出端，以及中間級的共軛匹配，藉由提供精確的傳輸線設計數值，提升電路設計的效率與準度。此電路的量測資料顯示出與模擬結果的高吻合度，並且證明本論文所提出之雙頻帶阻抗轉換理論於微波電路設計上的適用性。

關鍵字

放大器 ； 互補性金屬氧化物半導體 ； 雙頻帶 ； 阻抗轉換器 ； 傳輸線

並列摘要

This thesis presents a complete theory of a dual-frequency impedance transformer based on transmission lines. The theoretical analysis is insightfully described, and a limitation from the design equations is investigated. Subsequently, a design procedure is proposed to resolve this situation. To substantiate the theory, a dual-band amplifier operating at 10 and 24 GHz is fabricated by standard 0.13-μm 1P8M CMOS technology. The amplifier involves synthetic quasi-TEM transmission lines to build the dual-frequency matching circuits. The comparisons between simulations and on-wafer measurements are reported to establish the feasibility and flexibility of the presented technique in microwave applications.

並列關鍵字

Amplifier ； CMOS ； dual-frequency ； impedance transformer ； transmission line

參考文獻

[1] S. Wu and B. Razavi, “A 900-MHz/1.8-GHz CMOS receiver for dual-band applications,” IEEE J. Solid-State Circuits, vol. 33, no. 12, pp. 2178–2185, Dec. 1998.

[2] K. Yamamoto, S. Suzuki, K. Mori, T. Asada, T. Okuda, A. Inoue, T. Miura, K. Chomei, R. Hattori, M. Yamanouchi, and T. Shimura, “A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique,” IEEE J. Solid-State Circuits, vol. 35, no. 8, pp. 1109–1120, Aug. 2000.

[3] L.-H. Lu, H.-H. Hsieh, and Y.-S. Wang, “A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 10, pp. 685–687, Oct. 2005.

[4] H. Song, H. Kim, K. Han, J. Choi, C. Park, and B. Kim, “A sub-2 dB NF dual-band CMOS LNA for CDMA/WCDMA applications,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 3, pp. 212–214, Mar. 2008.

[5] C.-T. Fu, C.-L. Ko, C.-N. Kuo, and Y.-Z. Juang, “A 2.4–5.4-GHz wide tuning-range CMOS reconfigurable low-noise amplifier,” IEEE Trans. Microw. Theory Tech., vol. 56, no. 12, pp. 2754–2763, Dec. 2008.