微波及毫米波寬頻系統關鍵元件之研究

在寬頻系統中，如光纖通訊、超寬頻射頻通訊及無線電天文望遠鏡，由於傳輸速度相當快、資料寬頻大，需要低成本、平坦頻率響應及高頻之電路。此類電路的設計已是目前的研究重點。本論文主要包括微波分散式放大器和毫米波壓控振盪器之設計方法及實現，以及元件的模型化及螺旋電感的電磁模擬。為了準確預測電路的效能，首先描述了HEMT及CMOS的元件模型。這些元件模型包含了外部參數元件、內部參數元件及雜訊參數元件。在CMOS的元件模型中額外加入基板參數以預測基板的損耗效應。另外，本論文也討論到在矽基板上螺旋電感的電磁模擬。本論文回顧了分散式放大器的基本操作原理及基礎定律並且討論到其雜訊和輸出功率。之後分別用PHEMT製程設計了分散式放大器。此PHEMT分散式放大器使用相當小的功率消耗就表現出低雜訊及高輸出功率之良好效能。為了增進增益及頻寬效能，本論文提出了使用串疊及m-衍生架構之分散式放大器、並且對串疊架構之分散式做了分析及設計。這兩個CMOS串疊分散式放大器表現良好的增益及頻寬效能，並且是目前使用標準CMOS製程設計之分散式放大器中，增益頻寬乘積對直流功率之效率最高者。進一步，串疊分散式放大器實現了相當寬頻的低雜訊CMOS轉阻放大器。最後，為了能在相當小的晶片面積達高操作頻率及高輸出功率，本論文提出了使用雙推交錯偶合振盪器的架構，並且分析其相雜訊效能。此壓控振盪器為第一個輸出頻率大於製程元件最大共振頻率的CMOS壓控振盪器。在使用標準CMOS製程的毫米波振盪器中，這個晶片同時表現出最大輸出功率及最大可調範圍，而且不需要使用任何輸出放大器。

關鍵字

積體電路；壓控振盪器；分散式放大器

並列摘要

Circuits with cost efficiency, flat frequency response and high frequency are required in wideband systems, such as optical communcation, ultra-wide band (UWB) communication and the radio astronomy telescope. The designs of such circuits become important research topics recently. This dissertation includes the design methodology and implementation of microwave distributed amplifiers and VCOs, together with device modeling and EM simulation of spiral inductors. To predict the circuit performance, HEMT and CMOS device models used in the designs are described. The device models contain the extrinsic elements, intrinsic elements and noise contribution. To take account of the effect of the lossy substrate, the substrate parameters were included in the CMOS models. In addition, EM simulation of the spiral inductors on the silicon substrate is discussed. The basic operation and fundamental principles of the conventional distributed amplifier is reviewed. The noise and power performances of the distributed amplifier are also discussed. Then a distributed amplifier using a PHEMT process is designed to investigate the design equation. This PHEMT distributed amplifier presented low noise figure and high output power with low power consumption. To enhance the gain and bandwidth performance, CMOS distributed amplifiers using the cascode topology and m-derived matching sections are proposed. The design and analysis of the CMOS cascode distributed amplifiers are included. The CMOS cascode distributed amplifiers presents good gain and bandwidth performances and demonstrates the highest gain GBW (gain bandwidth product) per dc power efficiency for amplifiers using standard CMOS processes to date. with the recently published results. Furthermore, the cascode distributed topology is used to design the wideband low-noise CMOS transimpedance amplifiers. Finally, to achieve high operation frequency and high output power with miniature chip size, a CMOS cross-coupled push-push VCO is proposed. The phase noise analysis of the cross-coupled push-push VCO are presented. This VCO achieves the first CMOS VCO with output frequency higher than the device fMAX(maximum oscillation frequency). It also demonstrates the highest output power without any output amplifier and widest tuning range with comparable phase noise for millimeter-wave VCOs using bulk CMOS processes.

並列關鍵字

MMIC ； DA ； VCO

參考文獻

Introduction

[1] Behzad Razavi, Design of Integrated Circuits for Optical Communications, 2nd ed., New York: Wiley, 1998.

[3] G. R. Aiello and G. D. Rogerson, “Ultra-wideband wireless systems,” IEEE Microwave Magazine, pp. 36-47, June 2003

[5] Huei Wang, Kun-You Lin, Ren-Chieh Liu and Hong-Yeh Chang, “Monolithic millimeter-wave integrated circuits,” included in the Encyclopedia of RF and Microwave Engineering.

[7] J. Lee and B. Razavi, “A 40-Gb/s clock recovery circuit in 0.18

國際替代計量

微波及毫米波寬頻系統關鍵元件之研究

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