透過您的圖書館登入
IP:3.145.111.125
  • 學位論文

光波導式表面電漿子共振感測元件之研製

Design and Fabrication of Waveguide-based Surface Plasmon Resonance Sensors

指導教授 : 王維新
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


本研究以實作與模擬並行的方式,探討待測液體折射率、感測區金膜厚度及感測區長度對光波導式表面電漿子共振感測元件行為之影響,三項變因之試驗範圍分別為待測液體折射率1.3329~1.4724,金膜厚度100~800 Å,感測區長度50~300 um。理論模擬基礎為轉移矩陣法,並以複數模態追蹤求解。元件實作採半導體製程,以矽晶圓為基板,摻鍺二氧化矽為光波導,金為感測區薄膜材料。實作之元件特性良好,最大共振輸出光損耗為14.80 dB,最佳靈敏度可達5532.33 nm/RIU,且實驗量測結果與模擬趨勢相符。

並列摘要


This is to study the influences of analyte refractive index, metal film thickness, and interaction length on the behavior of waveguide-based surface plasmon resonance (SPR) sensors. To understand the basic characteristics of the device, multilayer structure with complex indices is simulated based on transfer matrix method and complex mode tracking technique. Moreover, SPR sensors using Ge-doped SiO2 optical waveguide on Si substrate, and Au as the sensing film are successfully implemented by semiconductor fabrication process. The sensitivity and SPR-induced attenuation as high as 5532.33 nm/RIU and 14.80 dB, respectively, are observed. The experimental results exhibit the same trend as predicted by the simulation.

參考文獻


[1] J. Homola, S. S. Yee, and G. Gauglitz, “Surface plasmon resonance sensors: review,” Sens. Actuators B, vol. 54, pp. 3-15, 1999.
[2] R. H. Ritchie, “Plasma losses by fast electrons in thin films,” Phys. Rev., vol. 106, pp. 874-881, 1957.
[3] C. Nylander, B. Liedberg, and T. Lind, “Gas detection by means of surface plasmons resonance,” Sens. Actuators, vol. 3, pp. 79-88, 1982.
[4] B. Liedberg, C. Nylander, and I. Lundström, “Surface plasmons resonance for gas detection and biosensing,” Sens. Actuators, vol. 4, pp. 299-304, 1983.
[5] B. Liedberg, C. Nylander, and I. Lundström, “Biosensing with surface plasmon resonance – how it all started,” Biosens. Bioelectron., vol. 10, pp. i-ix, 1995.

被引用紀錄


徐文浩(2006)。鋅鎳共同擴散式鈮酸鋰光波導元件之特性與應用〔博士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.01796
李忠勳(2006)。鈮酸鋰表面電漿子共振感測元件之研製〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.00588

延伸閱讀