化學機械研磨之面向上機台雙轉速研磨設計與參數最佳化

Dual Polish Rate With Parameters optimization in Face upward Chemical Mechanical Polish System

林家全(Chia-Chuan Lin)

指導教授 ： 陳永耀

國立臺灣大學/電機資訊學院/電機工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.01957

摘要

論文摘要
隨著半導體原件尺寸的日益縮小，在0.25um的製程下，CMP已成為重要的關鍵技術之一，因此建立起一個合理的研磨機制模式來作為研磨的預測及參考是非常重要的，近幾十年來亦有許多研究者探討不同的研磨機制，嘗試著將複雜的研磨過程表達出來。本論文首先分析各種不同的研磨機制，而後並對現有的研磨方程式加以修正以符合實際的研磨數據，並以面向上(Face-up)研磨機台的架構為主，建立合理的研磨方程式，提出雙轉速的研磨方式配合最佳化理論並對化學機械研磨(CMP)的主要參數，壓力、轉速、母片的不平坦、研磨墊的大小及變形量加以探討，因而降低研磨時晶圓上的最高點及最低點的差異量百分比，來符合實際CMP製程的需求，而此方法對於化學機械研磨機台的調整或機台的設計提供了合理的數據，也希望經由後人機台的實現後得以有實際資料來驗証本方法之正確性。

關鍵字

化學機械研磨 ； 最佳化

並列摘要

Abstract
With the shrinkage of CMOS length size, CMP has already became a key technology for semiconductor process. Recently, so many researches focus on the scheme of the polishing and try to develop the rule to build the model of burnishing.
It’s essential to build a reasonable polish mechanism to predict the result. In the paper first we analyze and compare the model of mechanical polish and fix the model to approximate the real data from fabrication. Then, the paper provide a dual polish method with parameters optimization and study the main parameters (pressure , rotation speed ,initial non-planarization , pad size, pad deformation ).Using the method we could reduce the non-planarization to match the CMP process requirement .
The method provides the reasonable simulation data to adjust the CMP machine or design a CMP machine. Wish there will be a real Face upward CMP machine to verify the simulation result from the paper.

並列關鍵字

optimization ； CMP ； chemical mechanical polish

參考文獻

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