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  • 學位論文

超聲輔助拋光墊修整器之研製

The development of a ultrasonic head for CMP pad conditioning

指導教授 : 左培倫

摘要


近年來,半導體製程技術發展極為迅速。半導體廠商對積體電路(Integrated Circuit, IC)元件的高積集度,微縮化以及高性能化的追求不斷提昇。「表面平坦化」的技術提昇便成為整個製程的關鍵。化學機械拋光(chemical mechanical polishing CMP))是目前半導體製程中達全域平坦化最有效的方式,而拋光墊為化學機械拋光中一項主要耗材,如能延長拋光墊的壽命,將可降低成本,提高製程穩定性。 本研究室去年執行國科會計畫成功將超聲波輔助技術應用在化學機械拋光上。今年持續與中國砂輪合作開發一種超聲輔助拋光墊修整器,並且配合特殊的給水系統與吸水系統,以使拋光墊修整時遺留的殘屑與鈍去的磨粒有效的與拋光墊分離及移除,如此對超高表面粗糙度要求的拋光工件有特殊的效果。同時修整拋光墊時所用的液體與拋光時的研漿(Slurry)也可以有所區分,甚至用水也可以。內容包括:1.超聲修整器與夾具的設計製作與架設。2.修整器給水系統與吸水系統裝設。3.超聲系統的量測實驗。4.拋光墊鈍化與修整實驗。期望能開發出對產業有幫助的化學機械拋光墊修整器。 本論文的最終結果顯示,在有加吸水蓋子的狀況下,快了4~6倍,而吸力大小得到效益比為390W:195W:0W=9.26:6.53:1,而在水量改變會影響到鐵粉的殘留的多寡,當水量太少則效益太差,但水量達某一程度以上則效益差異不大。超聲振動確實有助鐵粉的躍動,使得鐵粉更容易被水帶走或者被吸水蓋子給吸走。且振幅越大效果更加明顯。

並列摘要


The manufacturing process technology of semiconductor industry has been rapid improved recently. The high aspect ratio and high density of the IC device cause the higher requirement of the flatness of the SI wafer. The globe planarization has been the key technology of the whole manufacturing processes. The chemical mechanical polishing (CMP) have been wildly used in semiconductor industry for surface finishing as well as globe planarization. The polishing pad is one of the most important consumable in the CMP process. The extending expensive pad life has been the main interest by many researchers. The technology of ultrasonic assisted machining UAM has been successfully used in many machining processes recently. In this project we develop a brand new conditioning process with a UAM dressing head. The slurry came from inside and immediately go back from outside.That we believe can save a lot of slurry, and we may even dressing pad by pure water. This project includes design and manufacturing a new dressing head and some experiments to support this idea. As a result, that added suction-device is faster 4-6 times. The size ratios of the suction are 390W:195W:0W=9.26:6.53:1. The change of water will affect the amount of the powdered iron on the pad. The little water you add, the worse result you get. But if the water is added up to a certain extent, the speed of the powdered iron taking away by water is almost the same. Ultrasonic vibration could make powdered iron active and easier to be removed by water or suction-device. The speed-ratio of decrease of powdered iron was 6μm: 3μm: 0μm=1.3: 1.07: 1. The result is more apparent as long as the amplitude bigger.

參考文獻


[3] 林家全,“化學機械研磨之面向上機台雙轉速研磨設計與參數最佳化”,台灣大學電機工程系碩士論文,2004年。
[24] 張耀晟,“超聲振動輔助化學機械拋光之研究”,清華大學動力機械工程系碩士論文,2010年。
[8] Nam-Hoon Kim, Yong-Jin Seo, Woo-Sun Lee, “Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions”, Microelectronic Engineering, 83, 2006, pp362-370.
[9] Boumyoung , Hyunseop Lee, Kihyun Park, Hyoungjae Kim, Haedo Jeong,“Pad roughness variation and its effect on material removal profile in ceria-based CMP slurry”Journal of Materials Processing Technology,2008,vol 203,no.3,pp541-546.
[10] K.H. Park , H.J. Kimb, O.M. Chang, H.D. Jeong, “Effects of pad properties on material removal in chemical mechanical polishing”Journal of Materials Processing Technology 187–188 (2007) 73–76.

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