- 學位論文
低溫複晶矽薄膜電晶體之偏壓溫度不穩定性
Bias Temperature Instability of Low Temperature Polycrystalline Silicon Thin-Film Transistor
若您是本文的作者，可授權文章由華藝線上圖書館中協助推廣。
摘要
目前低溫複晶矽薄膜電晶體仍有需多問題需要解決，如漏電流的問題，以及我們對於複晶矽還有許多物理特性並不是十分的了解，而我們的研究方向就是低溫複晶矽薄膜電晶體之偏壓溫度不穩定性，這是屬於元件可靠度分析的範疇。在我們的論文裡，我們使用了不同的閘極偏壓，配合上不同的溫度以及不同的施以偏壓時間，其中包含了長時間與短時間，去做我們的元件偏壓溫度不穩定性實驗。藉由外在條件的不同，我們去觀察元件之後特性的變化。除了我們將試著去了解低溫複晶矽薄膜電晶體之電性之外，我們也閱讀相關的論文或研究報告，從這些已知的研究之中，尋找可能的發現原因，以及其內部的物理機制為何。基本上我們希望不僅能夠控制變因，明白什麼將會影響什麼，確實做到加速元件劣化的實驗，也就是能夠做到定性的實驗，更進一步，我們更希望能夠做到定量化的實驗，去確實明白產生了什麼改變如氧化層的缺陷增加、界面缺陷的產生，而這些增加的量又為多少。以上的這些，就是我們希望藉由實驗建立相關元件劣化的模型，而這些模型將可以提供如研究電路方面人員的參考。
並列摘要
Our thesis studies about bias temperature instability of low temperature polycrystalline silicon thin film transistors. In this thesis, we use different gate bias, stress gate bias time, temperature, and device structures to do our experiment. The different device structures are like LDD, channel types, gate stacks, and different width lengths etc. The goal of our experiment is to understand the electrical property of low temperature polycrystalline silicon thin film transistors. The electrical properties are like humps, threshold voltage shift, on current degrade and leakage current etc. Moreover, we want to build models of low temperature polycrystalline silicon thin film transistors about electrical properties. These models will be help for engineers who work about circuits.
參考文獻
[1] V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability 46 (2006) pp.1–23
[2] H. Küflüoglu and M. A. Alam, “Theory of Interface-Trap-Induced NBTI Degradation for Reduced Cross Section MOSFETs”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53, no. 5, May 2006.
[3] M.A. Alam , H. Kufluoglu, D. Varghese, S. Mahapatra, “A comprehensive model for PMOS NBTI degradation: Recent progress, Microelectronics Reliability” pp.853–862 2007.
[4] J.H. Stathis, S. Zafar, “The negative bias temperature instability in MOS devices:
A review, Microelectronics Reliability” vol.46 pp.270-286 2006.
延伸閱讀
- Sun, G. P. (2009). 低溫複晶矽薄膜電晶體之單位光通量漏電流特性分析 [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2009.00186
- 張宜菁（2010）。低溫複晶矽薄膜電晶體中汲極漏電流抑制方法之研究〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-0211201015593095
- Lin, C. J. (2010). 低溫複晶矽薄膜電晶體背光下之單位光通量漏電流特性分析 [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2010.00964
- Huang, Y. S. (2009). A Study of Low-Temperature Polycrystalline Silicon Thin Film Transistors and MOSFETs Using Advanced Materials [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2009.01100
- Tsai, Y. C. (2010). The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors [master's thesis, Tatung University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315110470