金氧半光與溫度感測元件結構及製程之研究

本研究主要是提出利用低溫製備超薄氧化層之反轉電流機制特性與其元件應用，其包括感光元件與溫度感測元件，並就其特性做探討。我們首先提出利用新穎低於400ﾟC製程溫度之絕緣層製備法來製備金氧半結構之太陽能電池，其係利用純水陽極氧化法於室溫製備該絕緣層，該製程方法所製備出之金氧半結構太陽能電池的最高光電轉換效率可以達到12.78% ；另外我們利用蝕刻後自然氧化保護層方法來製備金氧半結構側壁感光元件，採用厚的氧化層並利用蝕刻製程方式，在側壁上產生許多電子電洞傳輸中心，來當作光元件感光後之電訊號傳輸通道，其光暗電流導通反應等效於於超薄氧化層電子電洞傳輸方式，所呈現之光暗電流比高達一萬倍；本論文最後我們利用純水陽極氧化法製備超薄氧化層之技術，來製備堆疊結構高介電常數介電層(氧化鉿)與矽基板之介面層，並利用此氧化鉿/氧化矽堆疊層來製備堆疊結構溫度感測器，並藉此來探討少數載子與溫度變化之機制，發現在溫度較高的量測環境(>70˚C)的時候氧化鉿/氧化矽堆疊結構之溫度感測器會漸受到較嚴重的Frenkel-Poole效應影響。

關鍵字

超薄氧化層；太陽能電池；溫度感測器；氧化鉿

並列摘要

In this work, we will focus on the characteristics of inversion tunneling currents for ultra-thin oxide prepared by low temperature process and the MOS structure applications, including photo device and temperature sensor. We will discuss the interesting applications of the MOS device with ultra-thin oxide and the tunneling mechanism. In the first part, the MOS structure solar cell with ultra-thin oxide prepared by anodization (ANO) technique is studied. The direct tunneling mechanism was adopted for the conduction of the photo current and electron transfer. For the first time, the technique of using ANO in D.I. water to prepare the SiO2 of the MOS structure solar cell was proposed. An efficiency of 12.78 % was found in this work. In the second part, the side-wall oxide surface with etch then natural oxide passivation (ENOP) photo detector is studied by using the trap-assisted tunneling mechanism to sense photon. This trench structure is similar with the tunneling ultra-thin oxide. The ratio of photo to dark current is ten thousand times, which means the vertical structure with side-wall trap-assisted tunneling is very photosensitive. In the third part, the stacked HfO2/SiO2 MOS tunneling temperature sensor was studied. It was found that the saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor was gradually affected by Frenkel-Poole effect as temperature is higher than 70°C.

並列關鍵字

ultra-thin oxide ； solar cell ； temperature sensor ； HfO2

參考文獻

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國際替代計量

金氧半光與溫度感測元件結構及製程之研究

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