透過您的圖書館登入
IP:3.144.250.223
  • 學位論文

電磁感應式適壓微細感測開發

The Appropriate Pressure Micro-Sensor Development of Electromagnetic Induction

指導教授 : 黃俊德
若您是本文的作者,可授權文章由華藝線上圖書館中協助推廣。

摘要


本論文主要探討一般的探針卡關鍵之問題,由於晶圓在測試時要利用特定探針給予足夠接觸力以刺穿待測試片上之氧化層以量測電阻值,再利用所規定之電阻值標準判別晶粒是否有通過針測標準值,但由於探針給予銲墊氧化層之接觸力並非準確,會導致探針及晶圓受損或晶圓針測數據偏差。 在研究中應用電磁感應原理設計一垂直探針,利用線圈匝數及電流值參數之改變控制感應磁力大小控制針測接觸力之範圍,以克服上述的問題,且垂直式探針可直接提供足夠接觸力量刺穿氧化層。 由實驗得知電磁感應原理設計之垂直探針的可行性,利用參數之改變訂定出1g至5g之調整預壓值,並將此調整預壓值運用在LED針測及接觸電阻量測部分,以更準確調整壓應力以達到針測目的。

並列摘要


This study is to discuss the crucial problem of probe card. On the wafer-stage testing, in order to measure the resistance value, we need to use specific probe and have enough contact force to pierce the oxide layer on the tested strip. Then using the prescriptive standard of resistance value to judge whether the wafer fits the standard value of probing or not. However, the contact force of probe is not accurate to oxide layer; it will cause the damage of probe and wafer or deviation on the statistics of wafer probing. This study are applied the Electromagnetic induction to design vertical probe. In order to overcome above problems, we use the parameter change of the turns and current value to control the range of contact force of probing. The vertical probe can directly have enough contact force to pierce oxide layer. In this experiment, we can realize the feasibility of vertical probe which is designed by the Electromagnetic induction. Using the change of parameter to set out the adjustment of preload value 1gf to 5gf, apply it on LED probing and the measurement of contact resistance. It can adjust stress more accurately to reach the target of probing.

參考文獻


【5】 J. J. Broz and R. M. Rincon, “Probe Contact Resistance Variations During Elevated Temperature Wafer Test, ” IEEE Itc International Test Conference, pp.396-405, 1999.
【8】 M. Beiley, J. Leung and S. S. Wong, “Array probe card, ” IEEE Multi-Chip Module Conference, pp.28-31, 1992.
【9】 M. Beiley, J. Leung and S. S. Wong, “A micromachined array probe card-characterization, ” IEEE Transactions on Components, Packaging, and Manufacturing Technology, Vol. 18, No. 1, pp.184-191, 1995.
【11】 D. R. Liu and S. McCarthy, “Resistance change at copper contacts with thin and thick oxide film under a zero force liquid gallium probe, ” IEEE Electrical Contacts, pp.183-189,2000.
【12】 K. Kataoka, S. Kawamura, T. Itoh, K. Ishikawa, H. Honma and T. Suga, “Electroplating ni micro-cantilevers for lowcontact-force IC probing, ” Sensor and Actuators, part A, vol.103, No 2, pp.116-121, 2003.

延伸閱讀