調變鄰近元件反轉程度與耦合效應提升金氧半 穿隧二極體光反應作用之探討

Investigation of Enhancement on MIS(p) Tunnel Diode Photo Response via Coupling Effect by Controlling Neighboring Device Inversion Level

侯瑋慈(Wei-Tzu Hou)

指導教授 ： 胡振國

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2017年)

https://doi.org/10.6342/NTU201701191

摘要

本篇論文利用同心圓結構探討調變鄰近元件的反轉程度經由耦合效應影響中心元件特性。原本兩個不相連元件，施加特定電壓予鄰近元件影響元件下的電子分布進而造成擴散電流的改變。中心元件透過側向擴散電流補充，使得元件周邊氧化層壓降增加，蕭基特 (Schottky) 位障降低，大量電洞電流流經元件周邊，使得飽和電流增加，相對來說，也可以利用側向擴散電流減少，使得元件周邊氧化層壓降減少，蕭基特 (Schottky) 位障增加，飽和電流下降。此特性可進一步用來調變中心元件的光反應程度。
在第二章，探討Al/SiO2/Si ｐ型金氧半穿隧二極體元件與鄰近元件的耦合現象與不同氧化層厚度和不同電極間距下的耦合程度。實驗發現當氧化層厚度越厚及元件電極間距越來越小時，兩元件間都會有更明顯的耦合現象。另外，在照光下，會有兩種機制互相競爭，一個是來自旁邊元件的耦合效應，另一個則是照光產生載子效應，實驗結果發現即使在照光下，中間飽和電流仍是由耦合效應主導。
在第三章，探討透過鄰近元件造成的耦合效應控制中心元件Al/SiO2/Si ｐ型金氧半穿隧二極體飽和電流。實驗證明，藉由控制鄰近元件閘極電壓，中心元件的光電流與暗電流比值可被大幅提升。另外，由電流比值對鄰近元件閘極偏壓圖可以發現電流比值會出現兩個極大值，第一個極大值發生在耦合暗電流最低時，第二個極大值則是發生在耦合光電流比耦合暗電流相對大上許多時。
　　在第四章，我們對論文進行總結，並且提出一些對未來研究與方向的建議。

關鍵字

金氧半穿隧二極體 ； 金氧半電容 ； 蕭基特位障 ； 耦合效應 ； 光電流對暗電流比值

並列摘要

In this thesis, the concentric circle structure is used to investigate the inner circle device electrical property by modulating the inversion level of the adjacent device. The inner circle device and the adjacent device are not connected. By biasing the adjacent device, the electron distribution under the adjacent device would be affected and further cause the change in diffusion current to the inner circle device. Due to the supplement from lateral diffusion current, the oxide drop at the fringe of the inner circle device would increase, and Schottky barrier height would decrease causing large hole current flowing through the fringe of the inner circle device and hence the increase of saturation current. On the other hand, when the lateral diffusion current decreases, the oxide drop at the fringe of the inner circle gate would decrease and Schottky barrier height would increase causing the decrease of the saturation current. This phenomenon could be applied to modulating the photo response of the inner circle device.
In chapter 2, the coupling effect between the MIS(p) (Al/SiO2/Si) and the adjacent device was investigated. The coupling levels with various oxide thicknesses and electrode separations were also explored. It is found that when the oxide gets thicker or the two electrodes get closer, there would be a stronger coupling effect between two devices. In addition, it is noticed that there are two different mechanisms competing under illumination. One is the coupling effect and the other is light-induced carriers effect. It is found that the saturation current of inner circle device is still dominated by the coupling effect under illumination.
In chapter 3, we investigate controlling the MIS(p) (Al/SiO2/Si) saturation current via coupling effect. It is found that by modulating the voltage bias of the nearby device, the light-to-dark current ratio of the inner circle device could be highly enhanced. In addition, it is noticed that there are two peaks in the light-to-dark current ratio. The maxima of the current ratio occur at where Idark-minimum is lowest or the Ilight-coupling is large enough compared to the Idark-minimum.
In chapter 4, the whole chapters are concluded. Some suggestions for future work and study are provided.

並列關鍵字

MIS tunnel diodes ； MOS capacitors ； Schottky barrier ； coupling effect ； light-to-dark current ratio

參考文獻

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