現行的半導體製程大都是利用光學微影來達到成像的目的,因此解析度受到繞射極限的限制,我們使用三維時域有限差分法模擬銀奈米結構菲涅耳波帶片,在表面電漿與奈米結構的交互作用下增加中心光場強度借以突破繞射極限,分析電場及波印亭向量在銀奈米結構菲涅耳波帶片下的結果,我們同時也分析了銀奈米結構菲涅耳波帶片圈數及厚度對景深、聚焦點位置、大小及強度之影響。 我們利用角頻譜表示法解釋銀奈米結構菲涅耳波帶片能突破繞射極限之物理機制,也討論了k-domain中消散波和傳遞波對電場及波印亭向量的影響。 使用近場光學量測方法可以偵測設計之銀奈米結構菲涅耳波帶片之聚焦平面的光場強度,配合實驗之量測,未來可以作為利用表面電漿子效應的奈米微影之雛形。
Photolithography is mostly used to transfer the mask patterns to the wafer for the current semiconductor fabrications. The resolution of the image is limited by the diffraction limit. We use three-dimensional finite-difference time-domain method to study the focusing properties of the silver nanostructured Fresnel zone plates. We found that silver nanostructured Fresnel zone plates can have the focus beyond the diffraction limit by the plasmonic effects. The electric field and Poynting vectors for different silver Fresnel zone plates are analyzed by varying the number of zones, the silver slab thickness, etc. The depth, position, size and intensity of focus are also studied. The angular spectrum representation is used to investigate the physical mechanism of that the silver Fresnel zone plates can get the focus beyond the diffraction limit. We also find that the evanescent waves are much more important than the propagating waves to shape the electric fields and Poynting vectors. The designed silver Fresnel zone plates are fabricated by the standard semiconductor fabrication process. They are measured by the near-field scanning optical microscopy. Our study in silver nanostructured Fresnel zone plates can be used to design the plasmonic nanolithography prototype.