精密磨削加工單晶碳化矽之研究

Study on Precision Grinding of Single Crystal Silicon Carbide

胡世昕(Shih-Hsin, Hu)

指導教授 ： 趙崇禮

淡江大學/工學院/機械與機電工程學系碩士班/碩士(2019年)

https://doi.org/10.6846/TKU.2019.01013

摘要

科技發展迅速，電子元件多已朝向輕薄短小發展，對於電子元件基板的要求越來越高，目前多用單晶矽(Si)做為電子元件之基板材料，但隨著科技不斷的進步，單晶矽已經無法滿足現在所需之條件。而單晶碳化矽(SiC)擁有良好的物理與化學特性，有機會取代單晶矽成為新一代半導體材料，但因為其屬於硬脆材料，加工難度較高，故本研究對於單晶碳化矽之加工進行研究。本研究使用自製之氧化鈰(CeO2)砂輪，以機械化學磨削(MCG)的方式進行加工，加工參數以不同切深、乾溼式加工，以及不同砂輪種類及配比進行研究，最終使用50%重量百分比氧化鈰及20%重量百分比鑽石之配比，進行乾式加工，每刀切深3um，共10個循環，能得到表面粗糙度7nm(Ra)的碳化矽表面。

關鍵字

單晶碳化矽 ； 磨削加工 ； 機械化學磨削

並列摘要

Due to the rapid development of science and technology,Electronic components have been developed towards lighter,thinner and shorter. The requirements for electronic component substrates are getting higher . At present, the single crystal silicon (Si) is often used as the substrate material of electronic components, but with the continuous technology Progress, the single crystal silicon has been unable to reach the conditions required now. However, single crtstal silicon carbide (SiC) has good physical and chemical properties and has the opportunity to replace single crystal silicon as a new generation of semiconductor materials. Regrettably,(SiC)is difficult to process,because of Its hard and brittle material. This study is to exploring single crystal silicon carbide processing. In this study, the self-made cerium oxide (CeO2) grinding wheel was used to process by mechanical chemical grinding (MCG). The processing parameters were studied with different depth of cut, dry and wet processing, and different grinding wheel types and ratios. Finally, the ratio of 50% by weight of CeO2 and the ratio of 20% by weight of diamond for dry grinding, and the depth of each grinding is 3 um for 10 cycles, and a single crystal silicon carbide surface having a surface roughness of 7 nm (Ra) can be obtained.

並列關鍵字

Single Crystal Silicon Carbide ； Grinding ； MCG

參考文獻

【1】HUO Feng-wei, GUO Dong-ming, KANG Ren-ke, FENG Guang , “Nanogrinding of SiC wafers with high flatness and low subsurface damage” Trans. Nonferrous Met. Soc. China 22(2012) 3027−3033

【2】Ramsdell L.S., "Studies on Silicon Carbide" Am. Mineral. 32,(1945), p.64-82

【3】Zhigang Dong, Shang Gao, Han Huang, Renke Kang, Ziguang Wang, “Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel” Int J Adv Manuf Technol DOI 10.1007/s00170-015-7584-2.

【4】Sang-Kwon Lee, Processing and Characterization of Silicon Carbide(6H- SiC and 4H- SiC) Contacts for High Power and High Temperature Device Applications, 2002.

【5】施爾畏 碳化矽 晶體生長與缺陷(第一版) 北京科學出版社，2012年5月