機械化學研磨單晶碳化矽之砂輪開發

Development of Grinding Wheel for Mechanical Chemical Grinding of Single Crystal Silicon Carbide

郭柏漢(Po-Han Kuo)

指導教授 ： 趙崇禮

淡江大學/工學院/機械與機電工程學系碩士班/碩士(2020年)

https://doi.org/10.6846/TKU.2020.00093

摘要

隨著科技的發展，高科技產品日新月異且要求越來越高，半導體朝著高功率、高頻率、低能源損耗的趨勢發展。而與使用傳統的單晶矽相比，單晶碳化矽可以減少大部分損失的能量，在效能上比目前所使用的單晶矽相比表現更佳，有望成為下一代半導體材料。但其為硬脆材料因此加工困難，表面光潔度及損傷層之問題仍需克服。本研究使用作為化學磨料的氧化鈰(CeO2)與機械磨料的鑽石以不同配比製作成之砂輪，以機械化學磨削(MCG)的方式對單晶4H-SiC進行加工。加工參數分為不同進刀量、乾溼式加工進行研究。最終在乾式加工下能得到表面粗糙度2.4nm(Ra)的碳化矽表面。

關鍵字

單晶碳化矽 ； 磨削加工 ； 機械化學磨削 ； 表面粗糙度

並列摘要

With the development of science and technology, high-tech products are changing with each passing day and the requirements are getting higher and higher, and semiconductors are developing towards the trend of high power, high frequency, and low energy loss. Compared with the use of traditional single crystal silicon, single crystal silicon carbide can reduce most of the lost energy, and has better performance than the currently used single crystal silicon, which is expected to become the next generation of semiconductor materials. However, it is a hard and brittle material, so it is difficult to process, and the problems of surface finish and damaged layer still need to be overcome. In this study, single crystal 4H-SiC was processed by mechanical chemical grinding (MCG) using grinding wheels made of cerium oxide (CeO2) as a chemical abrasive and diamonds made of mechanical abrasive at different ratios. The processing parameters were studied with different feed amounts, dry and wet processing,. Finally, a silicon carbide surface with a surface roughness of 2.4 nm (Ra) can be obtained under dry processing.

並列關鍵字

Single Crystal Silicon Carbide ； Grinding ； MCG ； Surface roughness

參考文獻

【1】 F.W. Huo, D.M. Guo, R.K. Kang, G. Feng, “Nanogrinding of SiC wafers with high flatness and low subsurface damage” ,Trans. Nonferrous Met. Soc. China, Vol.22, pp.3027−3033, 2012.

【2】 Ramsdell.L.S, "Studies on Silicon Carbide" ,America. Mineralogist,. Vol.32, p.64-82, 1945

【3】 S.K. Lee, “Processing and Characterization of. Silicon. Carbide(6H- SiC and 4H- SiC) Contacts for High Power and High Temperature Device Applications” ,KTH, Royal Institute of Technology, 2002.

【4】 Morkoç.H, "Large-band-gap SiC,III-V nitride and II-VIZnSe-based semiconductor devicetechnologies" ,Journal of Applied Physics, 1994.

【5】 Hiroshi. Kasuga, Hitohsi. Ohmori, Taketoshi Mishima, Yutaka