以射頻反應式磁控濺鍍法於藍寶石基板成長鋅摻雜氮化銦材料及其相關特性之研究

Growth and Characteristics of Zn-doped InN Alloys on Sapphire by RF Reactive Magnetron Sputtering

陳宏昌(Hung-Chang Chen)

指導教授 ： 陳隆建

國立臺北科技大學/機電學院/光電工程系所/碩士(2005年)

https://doi.org/10.6841/NTUT.2005.00028

摘要

本論文研究以射頻反應式磁控濺鍍法成長鋅摻雜氮化銦材料於(0001)藍寶石基板上，並對其特性作研究。藉由改變濺鍍參數，如環境壓力、氣體流量、氮氣流量及射頻功率等，來探討濺鍍參數對於鋅摻雜氮化銦薄膜各種性質之影響。實驗結果顯示，在基板溫度500°C、腔體壓力為3 mTorr、氮氣流量為9 sccm 與射頻功率為50W的條件下，可以得到以InN(0002)為主晶面方向，電性質較佳之鋅摻雜氮化銦材料，其霍爾移動率為14.6cm2/V-s，載子濃度為5.6e20/cm3，片電阻率為15.9Ω/□。
其次研究在不同濺鍍功率成長條件下，經過熱處理後鋅摻雜氮化銦與氮化銦性質的變化，結果發現高溫熱處理後並沒有改善n 型氮化銦特性，反而轉變形成p 型鋅摻雜氧化銦薄膜。
最後再將p 型樣品去作光激發光譜(PL)實驗，所得結果與氮化銦能隙比較後，發現有二個放射能帶：3.342eV(371nm)及3.238eV(383 nm)分別定義為自由激子(Free-exciton, FE)或能階對能階(near Band to Band, B-B)之放射及施體能階對價電帶(Donor to Valence-band, D-V)之複合。

關鍵字

鋅摻雜氮化銦 ； 氮化銦 ； 射頻反應式磁控濺鍍法 ； 光激發光譜 ； 鋅摻雜氧化銦 ； 氧化銦

並列摘要

This dissertation investigates the growth and characteristics of Zn-doped Indium nitride alloys on (0001) Sapphire substrate by RF reactive magnetron sputtering. By changing the deposition conditions such as chamber pressure, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, chamber pressure 3m Torr, N2 flow rate 9 sccm and RF power under 50W, we obtained the main orientation of InN (0002) thin film and a better electric conduction quality of zinc-doped Indium Nitride material; Hall mobility of 14.6cm2/V-s, 5.6e20cm-3 carrier concentration, and 15.9 Ω/□ sheet resistance was also obtained. Next, we experiment the different changes of zinc-doped InN and InN characteristics under different RF power. As a result, high thermal treatment didn't improve the characteristics of n type InN. On the contrary, a p type In2O3:Zn thin film was produced. Finally, we used the p type sample to experiment Photoluminescence. As a conclusion, compared to InN band gap, in the former experiment, we discovered two main emission peaks: 3.342eV (371nm) and 3.238eV (383 nm), respectively defined as free-exciton (FE) or near band-to-band (B-B) radiation, and donor-to-valence-band (D-V) compound.

並列關鍵字

Zn-doped Indium nitride(InN:Zn) ； Indium nitride(InN) ； RF reactive magnetron sputtering ； Photoluminescence(PL) ； Zinc-doped Indium oxide(In2O3:Zn) ； Indium oxide(In2O3)

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