本論文研究以射頻反應式磁控濺鍍法成長氧化鋅摻雜氧化銦(Zinc oxide doped Indium Oxide,ZIO)材料於玻璃基板上,並對其光、電特性作研究。藉由改變濺鍍參數,如濺鍍壓力、氬氣流量及射頻功率等,探討濺鍍參數對於氧化鋅摻雜氧化銦薄膜各種性質之影響。其後並研究氧化鋅摻雜氧化銦在不同溫度的熱處理條件下退火,結果發現其熱穩定性良好。 完成氧化鋅摻雜氧化銦薄膜特性量測之後,我們繼續使用濺鍍法,將氧化鋅摻雜氧化銦薄膜沉積在p-GaN層上,並使用傳輸線模型探討材料與p-GaN之間的歐姆接觸特性。最後將氧化鋅摻雜氧化銦薄膜沉積在GaN-based LED上,並量測其I-V曲線以及Lop-I曲線。實驗結果顯示,氧化鋅摻雜氧化銦薄膜在可見光470nm下穿透率為80~90%,且ZIO/p-GaN在空氣中,溫度500℃合金10分鐘後特徵接觸電阻為1.4×10-4 Ω-cm2。應用在LED上,在注入電流20mA下之順向偏壓為3.51V。
This dissertation investigates the growth and characteristics of Zinc oxide doped Indium oxide alloys on glass and p-GaN by RF reactive magnetron sputtering.By changing deposition condition to analysis the characteristics of ZIO.Next,we found that the thermal stability of ZIO is well by changing anneal temperature in air. P-type ohmic contact between zinc oxide doped indium oxide (ZIO) and p-GaN during heat treatment is reported. Optimum conditions are selected to minimize the lowest specific contact resistance obtained is 1.4×10-4 Ω-cm2, as examined by transmission line model (TLM) after heat treatment process at an alloying temperature of 500℃ for 10 min in air. The light-transmission is about 80~90% at 470 nm blue light. ZIO films are also applied to GaN-based LEDs to form an electrode with a p-typeohmic contact. The typical I-V characteristics of the GaN-based LEDs with an ohmic contact layer of ZIO exhibit a forward-bias voltage of 3.51 V at injection current of 20mA.