IZO/ZnO/InN/CIGS/Mo結構之薄膜型太陽能電池之研製

Study on IZO / ZnO / InN / CIGS / Mo structure of CIGS thin film solar cells

陳鈺琪(Yu-Chi Chen)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2011年)

摘要

銅銦鎵硒（Copper Indium Gallium Diselenide，CIGS)為能隙寬0.9~1.7 eV之直接能隙半導體材料，具有較高的吸收係數，並可藉由調整本身的組成比例來得到所需的p-n型態及熱穩定佳等優點，因此被視為目前最適合做為高效率太陽能電池的吸收層材料。
本論文係以射頻磁控濺鍍法鍍製銅銦鎵硒(CIGS)薄膜型太陽能電池，其結
構為IZO / ZnO / InN / CIGS / Mo。藉由探討各膜層之較佳參數值，再加以整合，製作出CIGS太陽能電池。經由掃描式電子顯微鏡、霍爾量測、X-ray繞射儀以及拉曼光譜儀等，分別量測薄膜之結構、電特性與結晶性。
由實驗分析可知Mo薄膜與CIGS具有良好的歐姆接觸，而XRD量測可發現當在高溫退火下可有效增加CIGS的黃銅礦結晶特性，其繞射峰值約在2θ=26.7o、44.3 o以及52.5 o其中(112)面為此CIGS薄膜之優選取向。而本論文使用IZO薄膜取代傳統AZO透明導電層，其穿透率最高可達約90 %，最後量測元件之電流-電壓特性，測得其短路電流密度(JSC)為0.00824 mA/cm2，開路電壓(VOC)約0.1 V，填充因子(FF)0.257及其光電轉換效率(η)為0.00847 %。

關鍵字

磁控濺鍍 ； 銅銦鎵硒 ； 薄膜型太陽電池

並列摘要

Copper Indium Gallium Diselenide (CIGS) is the direct band gap semiconductor material with band gap ranging from 0.9 ~ 1.7 eV. Its advantage is possessed of the higher absorption coefficient and adjusted the conductivity type by different stoichiometry. Therefore, CIGS is regarded as the most suitable absorption layer for high efficiency solar cells.
The research use reactive magnetron sputtering system to grows CIGS-based thin film solar cell. The structure is IZO / ZnO / InN / CIGS / Mo. By exploring the better parameters of each films to product CIGS solar cells. The films were analyzed by scanning electron microscope, X-ray diffraction and Raman spectroscopy, respectively. The experimental analysis shows that Mo and CIGS have a good ohmic contact. In the XRD pattern, it can be observed that high temperature annealing can effectively increase the chalcopyrite crystal quality of CIGS films. The diffraction peaks of the chalcopyrite at 26.7o,44.3 o and 52.5 o. Then IZO transmittance is about 90 %.We fabricated the CIGS -based thin film solar cell successfully. Using current-voltage measurement to get fill factor(F.F.)=0.257, open circuit voltage(Voc) =0.1 V, short circuit current(Isc) =0.00824 mA/cm2 and η=0.00847% in our device.

並列關鍵字

RF sputtering ； CIGS ； Thin film solar cells

參考文獻

[24] 許雅瑛，p-MnZnO/n-Si結構光偵測二極體於強磁場下之光電特性的研究，碩

[1] J. Zhao, A. Wang, and M.A. Green, “19.8% efficient ‘‘honeycomb’’ textured multicrystalline and 24.4% monocrystalline silicon solar cells,” Applied Physics Letters, vol 73, no. 14, P.1991, 1998.

“ Potential of amorphous and microcrystalline silicon solar cells ,”Thin Solid Films, vol. 451, P518, 2004.

Computational Study of Photoelectrochemical Cell Ruthenium Sensitizers” J.

Am. Chem. Soc 127, 16835, 2005.