p-MnZnO/n-Si結構光偵測二極體於強磁場下之光電特性的研究

Optoelectronic properties of the p-MnZnO/n-Si structure photodiodes in a strong magnetic field

許雅瑛(Ya-Ying Hsu)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2010年)

https://doi.org/10.6841/NTUT.2010.00124

摘要

本實驗利用p-MnZnO/n-Si異質結構製作光感測二極體。使用噴霧熱解法法以不同比例濃度的錳摻雜之p型錳氧化鋅（p-MnZnO）薄膜沉積於（100）n型矽基板上，經穿透光譜（Transsmittance Spectrum）、掃描式電子顯微鏡（Scanning Electron Microscope，SEM）、霍爾量測系統（Hall Measurement）、X-ray繞射儀（X-ray Diffractometer，XRD）、共軛焦顯微鏡（Confocal Microscopy）、拉曼光譜（Raman Spectrum）等，樣品薄膜分析，確認薄膜之穿透率、能隙、表面型態、元素含量、晶格常數、能隙等進一步確認薄膜之結構和光特性。經黃光製程，進一步進行量測其電壓對電流之特性，在外加反向偏壓下，發現其暗電流與光電流分別約為4.31 × 10-7 and 6.95 × 10-4 A，其光電流與暗電流相較之下，明顯的差了將近四個數量級。在反向偏壓2V下，當外加0.5特斯拉強磁場下光電流明顯~1.24 × 10-3 A，推測此稀磁性半導體摻錳氧化鋅異質結構中可能是由於外加磁場下歐傑電子在複合效應。

關鍵字

錳摻雜氧化鋅 ； 噴霧熱解法 ； 光偵測器 ； 磁感應電流

並列摘要

Photodiodes with a p-MnZnO/n-Si substrate structure were fabricated. The Mn-doped p-type ZnO(p-MnZnO) films were deposited by ultrasonic spray pyrolysis on a (100)-oriented silicon substrate. Next, the sample is examined by Transsmittance Spectrum、Scanning Electron Microscope(SEM)、Hall Measurement、X-ray Diffractometer(XRD)、Confocal Microscopy、Raman Spectrum. In addition, we also investigate the transmittance, the surface, element composition, lattice constant, the energy gap of the sample. The dark and photocurrent of ~4.31 × 10-7 and 6.95 × 10-4 A are, respectively, measured at a reverse bias of 2 V, and a photocurrent to dark current contrast ratio of almost four orders of magnitude was observed. When a p-MnZnO/n-Si structure photodiode was applied a strong magnetic field of 0.5 Tesla, the photocurrent slightly decreases to ~1.24 × 10-3 A at a reverse bias of 2 V, this may be attributed to the Auger recombination effect due to applied magnetic field.

並列關鍵字

MnZnO ； Spray pyrolysis ； photodiode ； Magneto-induced current

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