- 學位論文
以射頻磁控濺鍍技術製備GaAs/SiO2/Ge異質結構之光電特性的研究
Investigation on optoelectronic characteristics of GaAs/SiO2/Ge heterostructure prepared by RF magnetron sputtering
摘要
本論文主要研究GaAs/SiO2/Ge異質結構之光電特性。使用射頻磁控濺鍍技術依序將緩衝本質層(buffer layer)二氧化矽(SiO2)、砷化鎵(GaAs)薄膜沈積在 p 型(100)鍺基板上，經穿透光譜(Transmittance Spectrum)、掃描式電子顯微鏡(Scanning Electron Microscope, SEM )、X-ray繞射儀(X-ray Diffractometer, XRD)、拉曼光譜(Raman Spectrum)等樣品薄膜分析後，得知薄膜之穿透率、吸收能隙、橫截面、結晶性等，進一步確認薄膜之結構和光特性。 本實驗主要探討三個部分，一是透過薄膜分析GaAs/Ge和GaAs/SiO2/Ge兩種結構，並討論SiO2厚度變化對結構的影響；二是探討照光下GaAs/Ge和GaAs/SiO2/Ge的電壓和電流變化；三是探討以射頻磁控濺鍍技術的砷化鎵的長晶品質。
並列摘要
In this work, a SiO2 buffer layer was first grown on Ge substrate, and then GaAs thin films were deposited on SiO2 buffer layer and Ge substrate by RF magnetron Sputter. Next, the sample is examined by Transsmittance Spectrum、Scanning Electron Microscope（SEM）、X-ray Diffractometer（XRD）、Raman Spectrum. The analysis of X-ray diffraction showed that all the GaAs thin films with and without SiO2 had a zinc blende structure. The optoelectronic characteristics of GaAs/SiO2/Ge heterostructure were investigated. The experiment focuses on three parts, one through the thin film analysis to discuss GaAs / Ge and GaAs/SiO2/Ge two structures, and discuss the impact of changes in the SiO2 thickness; second is to investigate the GaAs / Ge and GaAs/SiO2/Ge voltage and current changes under light illumination; Third, analyze RF magnetron sputtering of GaAs crystal growth technology quality.