利用熱氧法製作IZO/Cu2O異質接面太陽能電池及其特性之研究

Fabrication and characteristics of IZO/Cu2O heterostructure solar cells prepared by thermal oxidation

李宜璇(Yi-Hsuan Lee)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2011年)

摘要

本論文係利用射頻磁控濺鍍技術沉積Cu層，並藉由熱氧法製作Cu2O層及n-IZO/p-Cu2O異質接面太陽能電池。使用銅金屬靶材以射頻磁控濺鍍系統，濺鍍p型氧化亞銅(p-type Cu2O, p-Cu2O)薄膜，利用快速退火爐在大氣下進行快速熱退火以達到熱氧化製程(thermal oxidation)，藉由改變退火溫度及時間的不同得到不同性質表現之p-Cu2O薄膜，最後於p-Cu2O薄膜上以射頻磁控濺鍍系統濺鍍n型銦鋅氧化物(n-type IZO, n-IZO)後，即完成n-IZO/p-Cu2O異質接面型太陽能電池。
對於薄膜之光學特性分析，本研究利用XRD與SEM探討p-Cu2O薄膜與n-IZO薄膜之元素成分及表面結構分析，也利用Hall量測，分別探討p-Cu2O與n-IZO薄膜的載子濃度、遷移率以及電阻率，並比較其差異性。對於電性分析，最後利用銦做為金屬電極，利用I-V量測系統探討電池之I-V特性。本實驗分別探討在不同參數製備n-IZO/p-Cu2O異質接面太陽能電池，由結果得到於退火溫度500度下退火10分鐘製備之Cu2O薄膜並在其上濺鍍一層約900nm IZO薄膜之太陽電池，可獲得開路電壓Voc=0.05V、短路電流Jsc=0.00705mA/cm2、填充因子FF=0.447以及轉換效率η=0.00158%。

關鍵字

氧化亞銅 ； 銦鋅氧化物 ； 熱氧法 ； 射頻磁控濺鍍系統 ； 異質接面太陽能電池

並列摘要

In this dissertation, cuprous oxide(Cu2O) films were prepared by thermal oxidation using the Cu films were prepared by RF reactive magnetron sputtering, and changing the temperature and time of annealing to obtain the different performances of Cu2O thin films, After that, deposition of indium zinc oxide (IZO) by RF reactive magnetron sputtering on the Cu2O films to fabricated IZO/Cu2O heterostructure solar cells.
For the analyses of thin films, elements,composition and surface structure of p-Cu2O and n-IZO thin films were characterized by SEM and XRD measurements. Mobility,carrier concentrations and resistances of p-Cu2O and n-IZO thin films were measured by and Hall measurement.
For the analysis of solar cells,use In to be the metal electrode for I-V measurement. Performance of IZO/Cu2O heterostructure solar cells were compared. The best results were Voc = 0.05 V、Isc = 0.00705 mA/cm2、FF = 0.447 and η = 0.00158 % for the solar cell with 1.1 μm p-Cu2O by thermal oxidation on 500℃ in 10 minutes.

並列關鍵字

Cuprous oxide (Cu2O) ； Indium zinc oxide (IZO) ； RF reactive magnetron sputtering ； Thermal oxidation ； Heterostructure solar cells

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