本論文是利用射頻磁控濺鍍技術製備氧化亞銅(Cu2O)薄膜,靶材選用金屬銅(Cu) 靶,透過控制反應氣體比例(Ar:O2)以製備不同性質之氧化亞銅薄膜,藉由改變退火溫度以形成單晶相之氧化亞銅,使用穿透光譜分析光學特性,XRD與SEM探討薄膜的組成比例和表面結構,顯示出隨著氧氣比例增加,晶體成長從金屬銅與氧化亞銅混晶變成單相氧化亞銅及氧化銅,並利用Hall量測,探討不同參數氧化亞銅薄膜的載子濃度、遷移率以及電阻率,並比較其差異性。 在於透明導電薄膜基板(銦錫氧化物,ITO glass)依序濺鍍上ZnO/Cu2O/Ni完成一太陽能電池元件結構,利用I-V量測系統探討電池之I-V特性,並以SEM觀察不同參數下之ZnO/Cu2O介面形態。
In this study, Cuprous oxide (Cu2O) and Zinc oxide (ZnO) films were prepared by RF reactive magnetron sputtering to fabricated ZnO/Cu2O heterostructure solar cells. Using the metal copper (Cu) target and controlling the reaction gas ratio (Ar : O2) to prepare different performances of Cu2O thin films. Then, using annealing process to obtain single crystal phase Cu2O thin films. For the analyses of thin films, elements, composition and surface structure of Cu2O and ZnO thin films were characterized by SEM and XRD measurements. Mobility, carrier concentrations and resistances of Cu2O and ZnO thin films were measured by and Hall measurement. For the estimate of solar cells, Ni metal electrode were added by sputtering for I-V measurement. Performance of ZnO/Cu2O heterojuction solar cells were compared.