- 學位論文
稀磁性半導體摻錳氧化鋅薄膜沉積於氮化鎵發光二極體之自旋注入特性與磁光倍增效應之研究與探討
Effects of Spin-polarized Injection and Photo-ionization of Diluted Magnetic Semiconductor MnZnO Film Deposited on GaN-based Light Emitting Diodes
摘要
本研究係利用液相化學氣相沉積法沉積稀磁性半導體摻錳氧化鋅薄膜於氮化鎵發光二極體，研究與探討其自旋極化注入特性及磁光倍增效應。 調配含有MnCl2與 Zn(CH3COO)2的水溶液，以超音波震盪造成溶液分子吸附在載流氣體上通入高溫爐內，在氮化鎵發光二極體表面上成長摻錳氧化鋅薄膜。分析及探討摻錳氧化鋅薄膜產生的自旋注入效應及磁場下產生的磁光倍增效應對氮化鎵發光二極體所造成的影響。分別在無磁場及外加磁場下對於氮化鎵發光二極體的發光亮度、自旋注入效率、圓形極化率及右圓(σ+)和左圓(σ-)兩種圓形極化光之EL、PL光譜去探討。 外加磁場下，沉積摻錳氧化鋅薄膜的氮化鎵發光二極體分別在20mA及100mA的電流注入下，光功率強度提升了60%及50%。外加0.5T磁場且順向偏壓3.4V下，分析總電流包含注入的電流、自旋極化電流及光離化電流分別為33.71mA、0.97mA、0.4mA，自旋極化電流所佔比例為2.77%，與EL光譜的圓形極化率2.9%及PL光譜的極化率3.6%相符合。證實了自旋極化的注入能有效提升發光二極體的發光亮度。
並列摘要
In this work, to study the growth and characteristics of MnZnO film, and the MnZnO film were deposited by solution chemical vapor deposition (SCVD). This study discusses the effect of spin-polarized injection and photo-ionization on MnZnO films that are formed on the surface of GaN-based light-emitting diodes (LEDs). MnZnO film were prepared by spraying aqueous Zn(CH3COO)2•2H2O and MnCl2•2H2O as sources of zinc and manganese, respectively. Then deposit MnZnO film on GaN-based light-emitting diodes. Analyze and discuss the effects of spin-polarized injection and photo-ionization generated by the diluted magnetic semiconductor MnZnO film. To discuss the optical output power, spin-polarized injection efficiency, circular polarization, right circularly polarized (σ+) and left circularly polarized (σ-), EL and PL spectrum in and not in an applied magnetic field. In a magnetic field, the optical output power of GaN-based LEDs is increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. At forward bias of 3.4 V, the forward current of GaN-based LED with MnZnO film in a magnetic field of 0.5 T is included injection current of 33.71 mA, spin-polarized current of 0.97 mA, and photo-ionized current of 0.4 mA. The spin-polarized current-to-total current ratio at forward bias of 3.4 V is 2.77%. This result is consistent with the EL polarization is 2.9% and PL polarization is 3.6% at a forward current of 20 mA in a 0.5 T magnetic field. It proves that the spin-polarized injection can efficiently improve the optical output power of the light emitting diodes.