利用陽極處理製作奈米孔洞AlN緩衝層及其在GaN-based LED之應用

AlN Nanoporus Buffer Layer Prepared by Anodic Aluminum Oxide and GaN-based LED Applications

王致凱(Chih-Kai Wang)

指導教授 ： 陳隆建

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2008年)

https://doi.org/10.6841/NTUT.2008.00453

摘要

本研究係以射頻反應式磁控濺鍍的方法成長鋁/氮化鋁(Al/AlN)於藍寶石基板上，再以二次陽極處理的方式，使鋁薄膜氧化產生孔洞的陽極氧化鋁(anodic aluminium oxide；AAO)膜並觀察其表面的孔洞結構。在完成AAO/AlN/sapphire表面結構觀察後，運用AAO薄膜當作光罩，以電漿蝕刻的方式蝕刻AlN產生孔洞結構，製備出孔洞直徑為80~120nm左右的奈米孔洞的AlN薄膜，其孔洞間距約150~180nm。
最後將奈米孔洞AlN薄膜當做緩衝層，在上面磊晶GaN-based LED元件。實驗結果顯示，奈米孔洞AlN薄膜當做緩衝層，於20mA電流注入下，對照沒有奈米孔洞的單純AlN薄膜當做緩衝層GaN-bsaed LED可提升約提升38.2%的光輸出功率，而80mA也有32.9%的提升，大幅提升了發光二極體的效能。

關鍵字

陽極氧化處理 ； 奈米孔洞的氮化鋁緩衝層 ； 氮化鎵,發光二極體

並列摘要

This work discusses AlN nanoporous buffer layer prepared by anodic aluminum oxide (AAO) process for GaN-based light-emitting diode (LED) applications. After AAO process, the mean pore spacing and pore diameter of the AlN nanoporous buffer layer were in the range of 150 ~ 180 nm and 80 ~ 120 nm, respectively. The light output power of the GaN-based LED with an AlN nanoporous buffer layer was higher about 38.2% than that of the GaN-based LED without an AlN nanoporous buffer layer at an injection current of 20 mA. At aninjection current of 80 mA, only about 32.9% of enhancement factor on light extraction was obtained.

並列關鍵字

AAO ； AlN nanoporous buffer layer ； GaN-based LED

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