本論文研究以射頻反應式磁控濺鍍法成長銦錫氧化物(Indium Tin Oxide,ITO)材料於玻璃和PC塑膠基板上,並研究其光特性與電特性。藉由改變濺鍍參數:工作壓力、氬氣流量、射頻功率、濺鍍時間與工作距離等,分別成長在PC塑膠和玻璃基板上之ITO薄膜最佳的電阻率分別為5.25 X 10-3 ohm-cm,5.56 X 10-3 ohm-cm,將Glass/ITO作5000C,30分鐘的熱退火處理後其電阻率可以達到4.38 X 10-3 ohm-cm。不論是成長在PC塑膠或是玻璃基板上,其可見光穿透率均達到80%以上。 完成ITO在玻璃及PC塑膠基板上的的薄膜量測後,在其上,利用旋轉塗佈(Spin-coating)的方式,形成以P3HT(poly(3-hexylthiophene))與PCBM(phenyl-C61-butyric acid methyl ester)材料為主的成塊異質接面有機太陽能電池,並研究元件製程的改變對太陽能電池的影響。製作在玻璃基板上的太陽能電池,光電轉換效率可達到1.57%,製作在PC塑膠基板上的太陽能電池,光電轉換效率可達到1.14%。在大氣環境下持續照光,其元件壽命可達到8小時。
In This Work,we investigates the growth and characteristics of Indium tin oxide on glass and PC(Poly Carbonate) substrate by RF reactive magnetron sputtering. By changing deposition condition,we analysis the characteristics of ITO. We found that the lowest Resistivity on the PC substrate and glass is 5.25 X 10-3 ohm-cm,5.56 X 10-3 ohm-cm. After annealing, We get the lowest resistivity on the glass is 4.38 X 10-3 ohm-cm. No matter is the growth on the PC substrate or glass substrate, its visible light transmittance achieves above 80%. Next, we use P3HT(poly(3-hexylthiophene)) and PCBM(phenyl-C61-butyric acid methyl ester) as electron donor and electron acceptor, we blend P3HT and PCBM in DCB(1,2-dichloroethane),and use spin coating to fabricate thin film on glass and PC substrate. We fabricate bulk heterojunction structure Solar cell. In this study, we try to find the optimum process and enhance power conversion efficiency. Finally, the best PCE that we get is 1.14% on the PC substrate and 1.57% on glass substrate. Under continuous Irradiation,the Solar cell’s lifetime in the air can continuous 8 hours.