- 學位論文
銀/多層石墨烯對P型氮化鎵歐姆接觸特性之研究
Study of Ag/multi-layer graphene ohmic contacts to p-type GaN
摘要
本論文研究以射頻反應式磁控濺鍍法分別在玻璃及藍寶石基板上成長多層石墨烯(multi-layer graphene)。藉由改變濺鍍參數，如射頻功率、氬氣流量及濺鍍時間，探討濺鍍參數對於多層石墨烯薄膜特性的影響。對於薄膜特性之分析，利用SEM、XRD及拉曼光譜分別探討表面結構分析、元素成分和分子結構，也利用四點探針量測片電阻值，並分別探討不同溫度熱退火其差異性。結果發現，在真空下，退火溫度達800℃時，其片電阻值2.2KΩ/□，為最佳參數。多層石墨烯特性量測之後，繼續使用磁控濺鍍法，將銀、鎳薄膜及多層石墨烯依序沉積在p-GaN層上，並使用傳輸線模型(Transmission Line Model,TLM)探討與p-GaN之間的歐姆接觸特性。實驗結果顯示，Ag/Ni/graphene/p-GaN在真空環境下經過700℃退火10分鐘，有最低特徵電阻值，約1.03×10-3Ω-cm2。
並列摘要
In this dissertation investigates the growth of multi-layer graphene on glass and sapphire by RF reactive magnetron sputtering. By changing deposition condition to analyze the characteristics of multi-layer graphene. For the analysis of thin films, surface structure,elements composition and of multi-layer graphene were characterized by SEM, XRD and Raman spectroscopy measurements.Sheet resistances of multi-layer graphene were measured by 4-Point Probe ,and changing the temperature of annealing to obtain the different performances of multi-layer graphene. We can get the best sheet resistances was 2.2KΩ/□ by annealing at the temperature of 800℃ for 10 min in vacuum. After analysis of this film,deposition of Ag/Ni/multi-layer graphene by RF reactive magnetron sputtering on p-GaN films to fabricated transmission line model (TLM),and resaerch ohmic contact between multi-layer graphene and p-GaN. The result showed that the lowest specific contact resistance obtained about 1.03×10-4 Ω-cm2 by annealing at the temperature of 700℃ for 10 min in vacuum.