In this paper, we will explore the use of a radio frequency (RF) signal to modulate gain-switching Fabry-Perot (FP) semiconductor laser and using self-injection locking and external-injection locking approaches to produce sub-nanosecond optical pulse. Firstly, we designed and produced RF signal by using a Colpitts Voltage Controlled Oscillator (VCO). The VCO composed mainly by the oscillator circuit and a varactor diode. By change the voltage to control the capacitance of varactor diode, which can change the oscillation frequency of VCO, to satisfy the frequency of the gain-switching Fabry-Perot laser. The adjustable frequency range from was from 845 MHz to 900MHz. We also further investigate the relations of oscillation frequency with inductors and capacitors in resonant circuit to obtain oscillation signal with lower noise figure. Secondly, we use a 862 MHz modulation frequency to modulate 1550 nm Fabry-Perot laser to produce gain-switching optical pulse. Then injection-locking approach to the gain-switching FP laser by used self-injection locking and external-injection locking to form a pulse train. Through optical spectrum analyzer and high speed photo-diode measurement, we compare two injection locking characteristic in frequency-domain and time-domain. In frequency domain the side-mode suppression ratio (SMSR), linewidth, optical output power were including. As well as in time-domain, the pulsewidth, pulse repetition rate, and other parameters were obtained. At the same time, we also tuned the modulation frequency to observe both in time-domain and frequency-domain of the influence of various parameters. Finally, the injection-locking 1550 nm pulse laser modulated by RF signal with repetition rate of 13MHz, pulse-width of 500ps, and SMSR of 23dB was successfully obtained.