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  • 學位論文

以微波電漿噴射化學氣相沉積法動態成長大面積鑽石膜之研究

Studies of Dynamic Synthesizing Diamond Films on Moving Substrates Using MPJCVD

指導教授 : 林啟瑞 蘇春熺
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摘要


此研究最大的特色是突破系統設計上的困難,利用自組裝的微波電漿噴射化學氣相沉積 (Microwave Plasma Jet Chemical Vapor Deposition, MPJCVD)成功地以電漿噴射的方式在可移動的基材上成長大面積鑽石薄膜。 MPJCVD系統是利用天線導引微波於天線尖端解離CH4+H2氣體,形成噴射電漿,此微波噴射電漿具有高電子密度,因而可改善傳統鐘罩式或管狀式微波電漿CVD系統中電漿功率密度過低與分佈不均之問題;噴射電漿在基材上的反應面積約10 × 10 mm2,為了達到成長大面積鑽石膜的目的,設計組裝可移動式的載台機構,使基材能夠在往覆式移動中合成大面積鑽石膜。 研究中以動態方式成功合成面積10 × 40 mm2的鑽石薄膜,經由SEM、XRD、XPS與Raman光譜儀分析,結果顯示在較低基材移動速度下,不僅有較佳的結晶性,同時也有較高的sp3鍵結比例;此外,隨著載台升降機構位置的變化,電漿也有不同的特性,進而影響到鑽石膜成長速率與品質。 為了提高鑽石薄膜應用價值,後段研究中利用網印法將鑽石晶種印製成圖案於基材上,藉由鑽石晶種預芽表面處理來達到選區成長之目的,這種方法不論在成本或技術門檻皆相當低,更大幅降低製作時間。

並列摘要


This study is completed with a microwave plasma jet chemical vapor deposition (MPJCVD) system, which is self-designed and self-assembled equipment and is identified being a proven useful tool for growing the large area diamond films on moving substrates. MPJCVD system utilizes a conical antenna to guide microwaves and to ignite plasma in an atmosphere filled with methane and hydrogen. The plasma jet (10 × 10 × 10 mm3) ionized from the inflowing reactive gases into hydrocarbon ion particles at the antenna tip. Diamond films with an area of 10 × 40 mm2 were grown by using this MPJCVD system and a movable holder. Various substrate moving speed (sms) was designed in a controllable way. Diamond films were analyzed by SEM, XRD, XPS, and Raman spectra. The results show that crystallinity and crystal size become worse and samller accompanying the increasing of moving speed. XPS spectra were used to calculate diamond sp3 percentage for quality evaluation. Qualities of diamond films were showed worsened from 83 % to 31 % along with increasing moving speed of the holder from 0 mm/s to 8.4 mm/s. Besides, it was also found that the composition in plasma were changed with the different holder positions, then the diamond growth rate and quality were influenced. In the meantime, the silk screen mesh seeding method for patterned growth of diamond films was completed in order to enhance the application added-value. This method not only can cut down cost but also simplify the process and eliminate the fabrication period.

參考文獻


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